PMZ390UN,315
N-channel Trans MOSFET with 30V voltage and 1.78A current in DFN package
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.118 | $0.12 |
10 | $0.102 | $1.02 |
30 | $0.095 | $2.85 |
100 | $0.088 | $8.80 |
500 | $0.084 | $42.00 |
1000 | $0.081 | $81.00 |
Inventory:7,492
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Part Number : PMZ390UN,315
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Package/Case : DFN1006-3
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Brand : Nexperia Usa Inc.
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Components Classification : Single FETs, MOSFETs
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Datesheet : PMZ390UN,315 DataSheet (PDF)
The PMZ390UN is a high-voltage N-channel enhancement mode MOSFET transistor designed for use in power electronics applications. This MOSFET features a maximum drain-source voltage of 100V and a continuous drain current of 7A, making it suitable for various power switching and amplification tasks. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the PMZ390UN MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the PMZ390UN datasheet. Functionality The PMZ390UN N-channel MOSFET transistor is designed to efficiently switch and amplify high-power signals in various electronic applications. Its high voltage rating and current capacity make it a versatile component for power management. Usage Guide Q: What is the maximum drain-source voltage supported by the PMZ390UN? Q: Is the PMZ390UN suitable for high-power applications? For alternatives with similar functionalities, consider the following:Overview of PMZ390UN
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The PMZ390UN can handle a maximum drain-source voltage of 100V.
A: Yes, the PMZ390UN's 7A continuous drain current makes it suitable for high-power tasks in various circuits.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | DFN-1006-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 1.78 A | Rds On - Drain-Source Resistance | 460 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 450 mV |
Qg - Gate Charge | 890 pC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Brand | Nexperia |
Product Type | MOSFET | Factory Pack Quantity | 10000 |
Subcategory | MOSFETs | Part # Aliases | 934060156315 |
Unit Weight | 0.000212 oz |
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