• packageimg
packageimg

PMZ390UN,315

N-channel Trans MOSFET with 30V voltage and 1.78A current in DFN package

Quantity Unit Price(USD) Ext. Price
1 $0.118 $0.12
10 $0.102 $1.02
30 $0.095 $2.85
100 $0.088 $8.80
500 $0.084 $42.00
1000 $0.081 $81.00

Inventory:7,492

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for PMZ390UN,315 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of PMZ390UN

The PMZ390UN is a high-voltage N-channel enhancement mode MOSFET transistor designed for use in power electronics applications. This MOSFET features a maximum drain-source voltage of 100V and a continuous drain current of 7A, making it suitable for various power switching and amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • B: Body

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the PMZ390UN MOSFET for a visual representation.

Key Features

  • High Voltage Rating: The PMZ390UN can withstand up to 100V drain-source voltage, allowing for use in high-voltage applications.
  • High Current Capacity: With a continuous drain current of 7A, this MOSFET can handle substantial power loads.
  • Enhancement Mode: The N-channel enhancement mode design enables easy control of the transistor for switching operations.
  • Low On-Resistance: The PMZ390UN offers low on-resistance to minimize power losses and improve efficiency.
  • Fast Switching Speed: This MOSFET features fast switching characteristics, suitable for high-frequency applications.

Note: For detailed technical specifications, please refer to the PMZ390UN datasheet.

Application

  • Power Switching: Ideal for use in power switching circuits due to its high voltage and current capabilities.
  • Power Amplification: Suitable for power amplification tasks in audio amplifiers, motor control circuits, and more.
  • Voltage Regulation: Can be utilized in voltage regulation circuits to control and stabilize output voltages.

Functionality

The PMZ390UN N-channel MOSFET transistor is designed to efficiently switch and amplify high-power signals in various electronic applications. Its high voltage rating and current capacity make it a versatile component for power management.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate terminal for turning the MOSFET on and off.
  • Drain-Source Connections: Connect the load or power supply between the drain and source terminals.
  • Safe Operating Area: Ensure the operating conditions fall within the specified safe operating area to prevent damage to the MOSFET.

Frequently Asked Questions

Q: What is the maximum drain-source voltage supported by the PMZ390UN?
A: The PMZ390UN can handle a maximum drain-source voltage of 100V.

Q: Is the PMZ390UN suitable for high-power applications?
A: Yes, the PMZ390UN's 7A continuous drain current makes it suitable for high-power tasks in various circuits.

Equivalent

For alternatives with similar functionalities, consider the following:

  • IRF540N: A comparable N-channel MOSFET with similar voltage and current ratings, suitable for power electronics applications.
  • BUT11A: This NPN high-voltage transistor offers similar characteristics to the PMZ390UN and can be used in power circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case DFN-1006-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 1.78 A Rds On - Drain-Source Resistance 460 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 450 mV
Qg - Gate Charge 890 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Brand Nexperia
Product Type MOSFET Factory Pack Quantity 10000
Subcategory MOSFETs Part # Aliases 934060156315
Unit Weight 0.000212 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.