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IXTX200N10L2

High-power N-channel MOSFET with 3-pin configuration and isolated tab

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Overview of IXTX200N10L2

The IXTX200N10L2 is a high-power MOSFET transistor designed for use in industrial and power electronics applications. This N-channel enhancement mode transistor features a VDS voltage rating of 100V and a continuous drain current of 200A, making it suitable for high-power switching and amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for control input
  • D: Drain terminal for output connection
  • S: Source terminal for current flow


Circuit Diagram

Include a circuit diagram illustrating the connections and application of the IXTX200N10L2 MOSFET transistor for a clearer understanding.

Key Features

  • High-Power Transistor:The IXTX200N10L2 is capable of handling high power levels up to 200A continuous drain current.
  • Enhancement Mode Design:This N-channel MOSFET operates in enhancement mode, offering easy and efficient control of high-power circuits.
  • Low On-Resistance:With a low on-resistance, this transistor minimizes power loss and heat generation during operation.
  • High Voltage Rating:Featuring a VDS rating of 100V, the IXTX200N10L2 can withstand high voltage applications.
  • Robust Construction:Built for industrial environments, this transistor is designed to withstand demanding conditions.

Note: For detailed technical specifications, please refer to the IXTX200N10L2 datasheet.

Application

  • Power Electronics: Ideal for use in power supplies, motor controls, and inverters where high-power switching is required.
  • Industrial Automation: Suitable for industrial automation systems that demand high current handling capabilities.
  • Switching Circuits: Used in various switching circuits to control power flow and amplify signals.

Functionality

The IXTX200N10L2 MOSFET transistor serves as a robust and efficient electronic switch, enabling high-power applications to be controlled and amplified effectively.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to control the conductivity of the transistor.
  • Drain Connection: Connect the load to the drain terminal for power delivery.
  • Source Connection: Complete the circuit by connecting the source terminal to the ground.

Frequently Asked Questions

Q: What is the maximum drain current for the IXTX200N10L2?
A: The IXTX200N10L2 can handle a continuous drain current of up to 200A, making it suitable for high-power applications.

Q: Is the IXTX200N10L2 suitable for automotive applications?
A: While the IXTX200N10L2 is designed for industrial and power electronics, its high-power capabilities make it suitable for certain automotive applications where high current handling is required.

Equivalent

For alternative high-power MOSFET transistors, consider these options:

  • IXTK90N25L2: A high-current N-channel MOSFET with a 250A continuous drain current rating.
  • IXTH96N20: This MOSFET offers a balance of high power handling and low on-resistance for efficient switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 100 Maximum On-Resistance @ 25 ℃ (Ohm) 0.011
Continuous Drain Current @ 25 ℃ (A) 200 Gate Charge (nC) 540
Input Capacitance, CISS (pF) 23000 Thermal resistance [junction-case] (K/W) 0.12
Configuration Single Package Type TO-247 PLUS
Typical Reverse Recovery Time (ns) 245 Power Dissipation (W) 1040
Sample Request No Check Stock Yes

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