PMH600UNEH
PMH600UNE Series 20V N-Channel Trench MOSFET with 800mA and 620mΩ
Inventory:7,818
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- 365 Days Quality Guarantee
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Part Number : PMH600UNEH
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Package/Case : 3-XFDFN
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Brand : Nexperia USA Inc.
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Components Classification : Single FETs, MOSFETs
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Datesheet : PMH600UNEH DataSheet (PDF)
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Series : PMH600UNE
Overview of PMH600UNEH
Designed with Trench MOSFET technology and housed in a leadless ultra small DFN0606-3 (SOT8001) SMD plastic package, the PMH600UNEH N-channel enhancement mode Field-Effect Transistor sets a new standard for compact, high-performance components. Its small footprint and high power capabilities make it an ideal choice for applications where space is limited, but reliable performance is paramount
Key Features
- Rapid-start circuitry
- High-efficiency operation
- Surge current limiting
- Thermal runaway protection
Application
- Superior performance
- Flexible use
- Simple integration
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Rds On (Max) @ Id, Vgs | 620mOhm @ 600mA, 4.5V | Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.31 nC @ 4.5 V | Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 21.3 pF @ 10 V | Power Dissipation (Max) | 370mW (Ta), 2.2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | DFN0606-3 | Package / Case | 3-XFDFN |
| Base Product Number | PMH600 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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