• packageimg
packageimg

PMBTA42DS,125

SOTpackage supports compact system integratio

Quantity Unit Price(USD) Ext. Price
1 $0.293 $0.29
200 $0.114 $22.80
500 $0.110 $55.00
1000 $0.108 $108.00

Inventory:7,957

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for PMBTA42DS,125 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of PMBTA42DS,125

NPN/NPN high-voltage double transistor in a small SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

Key Features

  • Safe and reliable operation
  • Low noise disturbance
  • Robust against overvoltage
  • AEC-Q100 certified

Application

  • User-friendly interface
  • Seamless integration
  • Customizable features

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 300V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 10V Power - Max 420mW
Frequency - Transition 50MHz Operating Temperature 150°C (TJ)
Grade Automotive Qualification AEC-Q101
Mounting Type Surface Mount Package / Case TSOP-6
Supplier Device Package 6-TSOP Base Product Number PMBTA42
Manufacturer Nexperia Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Dual
Collector- Emitter Voltage VCEO Max 300 V Collector- Base Voltage VCBO 300 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 500 mV
Maximum DC Collector Current 100 mA Pd - Power Dissipation 700 mW
Gain Bandwidth Product fT 50 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Series PMBTA42DS
Brand Nexperia Continuous Collector Current 100 mA
DC Current Gain hFE Max 40 Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Part # Aliases 934059919125
Unit Weight 0.000391 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

NX3008CBKV,115

NX3008CBKV,115

Trans MOSFET N/P-CH 30V 0.22A 6-Pin SOT-666 T/R
BF720T1G

BF720T1G

Transistor - General Purpose Bipolar Junction Transistor (NPN) rated for 300V and 0
HGTP7N60C3D

HGTP7N60C3D

Fairchild HGTP7N60C3D IGBT
SI4401DY

SI4401DY

40V MOSFET with a current capacity of 10.5A and power rating of 3W
ZXMC10A816N8

ZXMC10A816N8

low on-resistance with minimal gate drive requirement
ZXTP722MATA

ZXTP722MATA

PNP Bipolar Transistor ZXTP722MATA from Diodes Inc
2N3767

2N3767

Bipolar Transistors - BJT Power BJT
FZ900R12KE4HOSA1

FZ900R12KE4HOSA1

FZ900R12KE4HOSA1 IGBT
IRF5851

IRF5851

Surface Mount Mosfet Array with 20V Voltage Rating and 2.7A Current Rating
IXKN75N60C

IXKN75N60C

High-power N-channel MOSFET transistor in a 4-pin SOT-227B package