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PBSS4041NT,215

Trans GP BJT NPN 60V 3.8A 1100mW Automotive AEC-Q101 3-Pin SOT-23 T/R

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Overview of PBSS4041NT,215

The PBSS4041NT is a reliable and versatile solution for small signal switching needs. Its NPN low V Breakthrough In Small Signal (BISS) technology, combined with its small SOT23 package, makes it a valuable component for compact and efficient electronic designs. With the PNP complement PBSS4041PT also available, designers have the flexibility to choose the right transistor for their specific application needs. Whether used in handheld devices, IoT gadgets, or other space-constrained electronics, the PBSS4041NT delivers high performance in a small package

Key Features

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High energy efficiency due to less heat generation
  • AEC-Q101 qualified
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Application

  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Transistor Type NPN
Current - Collector (Ic) (Max) 3.8 A Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 200mA, 4A Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2A, 2V Power - Max 1.1 W
Frequency - Transition 175MHz Operating Temperature 150°C (TJ)
Grade Automotive Qualification AEC-Q100
Mounting Type Surface Mount Package / Case TSOP-6
Supplier Device Package TO-236AB Base Product Number PBSS4041
Manufacturer Nexperia Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style SMD/SMT
Transistor Polarity NPN, PNP Configuration Dual
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 80 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 200 mV, 250 mV
Maximum DC Collector Current 1 A, 900 mA Pd - Power Dissipation 290 mW, 420 mW
Gain Bandwidth Product fT 220 MHz, 185 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Brand Nexperia
Continuous Collector Current 1 A, - 900 mA DC Collector/Base Gain hfe Min 30
DC Current Gain hFE Max 250 at 1 mA, 5 V Height 1 mm
Length 3.1 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Width 1.7 mm
Part # Aliases 934062763215 Unit Weight 0.000282 oz

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