IXTA60N20T
Unipolar N-MOSFET transistor suitable for applications requiring high voltage (200V) and current (60A) handling, with a fast switching time of 118ns
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $12.342 | $12.34 |
200 | $4.926 | $985.20 |
500 | $4.761 | $2,380.50 |
1000 | $4.679 | $4,679.00 |
Inventory:7,593
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Part Number : IXTA60N20T
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Package/Case : D2PAK-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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Datesheet : IXTA60N20T DataSheet (PDF)
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Series : IXTA60N20
The IXTA60N20T is a 200V, 60A TrenchT2 IGBT featuring ultra-low VCE(on) to reduce power dissipation and a wide safe operating area to enable high reliability and robust performance in various power electronic applications. It is designed for use in high power switching and motor control applications, offering a balance of high efficiency and ruggedness. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IXTA60N20T IGBT for a visual representation. Note: For detailed technical specifications, please refer to the IXTA60N20T datasheet. Functionality The IXTA60N20T is a high-voltage, high-current IGBT designed for efficient power switching and motor control. It provides reliable and rugged performance in various power electronic applications. Usage Guide Q: What is the maximum operating voltage for the IXTA60N20T? Q: Is the IXTA60N20T suitable for high-power motor control applications? For similar functionalities, consider these alternatives to the IXTA60N20T:Overview of IXTA60N20T
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The IXTA60N20T has a maximum operating voltage of 200V.
A: Yes, the IXTA60N20T is designed to handle high currents and is suitable for high-power motor control and drive applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Drain-Source Voltage (V) | 200 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.04 |
Continuous Drain Current @ 25 ℃ (A) | 60 | Gate Charge (nC) | 73 |
Input Capacitance, CISS (pF) | 4530 | Thermal resistance [junction-case] (K/W) | 0.3 |
Configuration | Single | Package Type | TO-263 |
Typical Reverse Recovery Time (ns) | 118 | Power Dissipation (W) | 500 |
Sample Request | No | Check Stock | Yes |
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