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NTE2525

Described as a PNP silicon transistor, NTE2525 operates with a maximum voltage of 60V and can handle currents up to 8A

Inventory:6,331

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Overview of NTE2525

Bipolar (BJT) Transistor PNP 50 V 8 A 130MHz 1 W Through Hole TO-251

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Bag Product Status Active
Transistor Type PNP Current - Collector (Ic) (Max) 8 A
Voltage - Collector Emitter Breakdown (Max) 50 V Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 4A
Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 2V
Power - Max 1 W Frequency - Transition 130MHz
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package TO-251

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