NTE2300
NTE2300 Bipolar NPN Transistor - 800V, 5A, 3MHz, 120W, Through Hole TO-3P
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Part Number : NTE2300
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Package/Case : TO-3P-3
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Brand : NTE Electronics, Inc
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Components Classification : Single Bipolar Transistors
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Datesheet : NTE2300 DataSheet (PDF)
Overview of NTE2300
Bipolar (BJT) Transistor NPN 800 V 5 A 3MHz 120 W Through Hole TO-3P
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Package | Bag | Product Status | Active |
Transistor Type | NPN | Current - Collector (Ic) (Max) | 5 A |
Voltage - Collector Emitter Breakdown (Max) | 800 V | Vce Saturation (Max) @ Ib, Ic | 5V @ 800mA, 4A |
Current - Collector Cutoff (Max) | 10µA (ICBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 1A, 5V |
Power - Max | 120 W | Frequency - Transition | 3MHz |
Operating Temperature | 150°C (TJ) | Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 | Supplier Device Package | TO-3P |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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