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NTE2300

NTE2300 Bipolar NPN Transistor - 800V, 5A, 3MHz, 120W, Through Hole TO-3P

Inventory:6,979

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Overview of NTE2300

Bipolar (BJT) Transistor NPN 800 V 5 A 3MHz 120 W Through Hole TO-3P

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Bag Product Status Active
Transistor Type NPN Current - Collector (Ic) (Max) 5 A
Voltage - Collector Emitter Breakdown (Max) 800 V Vce Saturation (Max) @ Ib, Ic 5V @ 800mA, 4A
Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 1A, 5V
Power - Max 120 W Frequency - Transition 3MHz
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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