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NTE123A

NTE123A is a NPN bipolar transistor, capable of handling 40 volts with a power dissipation of 1

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Overview of NTE123A

The NTE123A is a silicon NPN transistor designed for general-purpose amplifier and switching applications. It is commonly used in electronic circuits for its high current and voltage ratings, making it suitable for a wide range of electronic projects.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): The lead that emits electrons and carries the majority charge carriers.
  • Base (B): The control terminal that regulates the flow of charge carriers.
  • Collector (C): The lead that collects the majority charge carriers and carries the current out of the transistor.

Circuit Diagram

An example circuit diagram showcasing the use of the NTE123A transistor for amplification or switching purposes.

Key Features

  • High Current Gain: The NTE123A offers high current gain, making it suitable for amplification of weak signals.
  • Low Saturation Voltage: With a low saturation voltage, this transistor minimizes power dissipation and heat generation.
  • High Voltage Rating: The transistor can withstand relatively high voltage levels, enhancing its versatility in various circuit designs.
  • Fast Switching Speed: The NTE123A exhibits fast switching characteristics, enabling rapid on/off transitions in switching applications.
  • Wide Operating Temperature Range: This transistor operates effectively across a wide temperature range, ensuring reliability in diverse environmental conditions.

Note: For detailed technical specifications, please refer to the NTE123A transistor datasheet.

Application

  • Audio Amplification: Ideal for use in audio amplifier circuits due to its high current gain and low saturation voltage.
  • Switching Circuits: Commonly employed in electronic switches and relay drivers for its fast switching speed and high voltage rating.
  • Signal Processing: Used in signal processing applications where a high current gain is necessary for amplification.

Functionality

The NTE123A transistor serves as a versatile component for amplifying signals and controlling the flow of current in electronic circuits. Its high current gain, low saturation voltage, and high voltage rating make it a valuable asset in various applications.

Usage Guide

  • Amplification: Connect the emitter, base, and collector of the transistor as per the amplification circuit requirements.
  • Switching: Utilize the transistor in a switching circuit by appropriately biasing the base terminal and connecting the load to the collector.
  • Voltage Ratings: Ensure that the voltage levels across the transistor do not exceed its maximum ratings to prevent damage.

Frequently Asked Questions

Q: Is the NTE123A suitable for high-frequency applications?
A: While the NTE123A has fast switching characteristics, it is recommended to refer to specialized high-frequency transistors for such applications.

Equivalent

For similar functionalities, consider these alternatives to the NTE123A transistor:

  • 2N3904: A widely used general-purpose NPN transistor with similar amplification and switching capabilities.
  • BC547: This NPN transistor is commonly employed in audio amplifier and signal processing circuits, serving as a functional substitute for the NTE123A.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Packaging Bag Part Status Active
Transistor Type NPN Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 40 V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 1.2 W Frequency - Transition 300MHz
Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can Supplier Device Package TO-18

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