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MSC080SMA120B

SiC N-Channel MOSFET 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube

Inventory:6,289

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Overview of MSC080SMA120B

Unlock the full potential of your systems with the MSC080SMA120B, a flagship product in our esteemed SiC MOSFET lineup. By harnessing the power of Silicon Carbide, Microchip's solution enables higher performance, reduced size and weight, and unmatched reliability. This synergy of innovation and expertise ensures that your equipment operates flawlessly, without compromising on efficiency or lifespan

Key Features

  • Low power consumption and high efficiency
  • Safe operating area and overcurrent protection
  • Short-circuit proof and surge immune
  • Long lifespan and low maintenance

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tube Product Status Active
FET Type N-Channel Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 100mOhm @ 15A, 20V
Vgs(th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs 64 nC @ 20 V
Vgs (Max) +23V, -10V Input Capacitance (Ciss) (Max) @ Vds 838 pF @ 1000 V
Power Dissipation (Max) 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Supplier Device Package TO-247-3
Package / Case TO-247-3 Base Product Number MSC080

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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