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MSC025SMA120B

MSC025SMA120B MOSFET: Harness the power of Silicon Carbide (SiC) with this 1200-volt device

Quantity Unit Price(USD) Ext. Price
1 $0.466 $0.47
200 $0.181 $36.20
500 $0.174 $87.00
1000 $0.171 $171.00

Inventory:5,084

*The price is for reference only.
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Overview of MSC025SMA120B

Introducing the latest addition to our SiC MOSFET device lineup, the MSC025SMA120B offers cutting-edge performance for a wide range of applications. Designed to maximize system efficiency, reduce system weight, and minimize size, this SiC solution from Microchip is ideal for industries seeking top-tier performance in their equipment. With a focus on reliability, the MSC025SMA120B ensures consistent performance throughout the lifespan of the end equipment, giving users peace of mind and confidence in their systems

Key Features

  • High voltage rating and low gate threshold
  • Low capacitance and fast switching speed
  • High junction temperature stability and avalanche ruggedness

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tube Product Status Active
FET Type N-Channel Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs 232 nC @ 20 V
Vgs (Max) +25V, -10V Input Capacitance (Ciss) (Max) @ Vds 3020 pF @ 1000 V
Power Dissipation (Max) 500W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Supplier Device Package TO-247-3
Package / Case TO-247-3 Base Product Number MSC025

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

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