• packageimg
packageimg

MMBT5401-7-F

The MMBT5401-7-F is a high performance SS PNP transistor suitable for a wide range of electronic circuits

Quantity Unit Price(USD) Ext. Price
20 $0.024 $0.48
200 $0.021 $4.20
600 $0.020 $12.00
3000 $0.018 $54.00
9000 $0.017 $153.00
21000 $0.016 $336.00

Inventory:7,172

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for MMBT5401-7-F using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of MMBT5401-7-F

The MMBT5401-7-F is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum current rating of 600mA and a maximum voltage rating of 160V, making it suitable for a wide range of electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Output terminal for current flow
  • Base (B): Input terminal for controlling the flow of current
  • Emitter (E): Terminal that emits current

Circuit Diagram

Include a circuit diagram illustrating the connections and usage of the MMBT5401-7-F BJT for better understanding.

Key Features

  • PNP Transistor: The MMBT5401-7-F is a PNP BJT suitable for various amplification and switching applications.
  • High Current and Voltage Ratings: With a maximum current rating of 600mA and a maximum voltage rating of 160V, it can handle moderate power applications.
  • General Purpose: Ideal for general-purpose circuit designs requiring PNP transistors.
  • Compact Package: Available in a space-saving SOT-23 package.
  • Low Cost: Provides cost-effective solutions for electronic projects.

Note: For detailed technical specifications, please refer to the MMBT5401-7-F datasheet.

Application

  • Amplification: Used in audio amplifiers, signal amplification circuits, and general electronic amplification applications.
  • Switching: Suitable for switching applications in electronic circuits and digital logic designs.
  • Voltage Regulation: Can be employed in voltage regulator circuits and power management applications.

Functionality

The MMBT5401-7-F PNP BJT serves as an essential component in electronic circuits, enabling amplification and controlled switching of signals and currents.

Usage Guide

  • Identify Pinout: Locate the Collector, Base, and Emitter leads based on the datasheet or component markings.
  • Operating Conditions: Ensure the current and voltage ratings of the transistor align with the circuit requirements.
  • Control Signal: Apply the appropriate voltage and current to the Base terminal to control the transistor's conduction.

Equivalent

For alternatives with similar functionalities, consider the following:

  • MMBT3904: A general-purpose NPN transistor with comparable ratings and characteristics for versatile applications.
  • BC557: A PNP transistor with similar specifications, suitable for amplification and low-power switching.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Package / Case SOT-23-3
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 150 V Collector- Base Voltage VCBO 160 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 500 mV
Maximum DC Collector Current 600 mA Pd - Power Dissipation 310 mW
Gain Bandwidth Product fT 300 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series MMBT5401
Brand Diodes Incorporated Continuous Collector Current - 200 mA
DC Collector/Base Gain hfe Min 60 DC Current Gain hFE Max 240
Height 1 mm Length 3.05 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 3000
Subcategory Transistors Technology Si
Width 1.4 mm Unit Weight 0.000282 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

LM3046M/NOPB

LM3046M/NOPB

LM3046M/NOPB represents a transistor array housed in a 14-SOIC package
TSM2309CX RFG

TSM2309CX RFG

Transistor: P-MOSFET, unipolar, -60V, -2A, 1.56W, SOT23
APT150GN120J

APT150GN120J

IGBT Chip, N-CH, 1200V, 215A, 625000mW, 4-Pin SOT-227 Tube
IXKR40N60C

IXKR40N60C

Features and Characteristics: Meet the IXKR40N60C, a high-performance N-channel MOSFET tailored for high-power environments
IRF644NS

IRF644NS

IRF644NS is a N-channel MOSFET designed for applications requiring up to 250 volts and 14 amps
MCH6661-TL-W

MCH6661-TL-W

Capable of handling up to 900mA continuous current and 800mW power dissipation
CSD25402Q3AT

CSD25402Q3AT

NexFET MOSFET with -20V operation, P-channel design, compact single SON 3x3 package, low 8
SLA6026

SLA6026

SLA6026: A Trans Darlington NPN/PNP with a voltage rating of 60V and a current handling capacity of 10A
BC81740MTF

BC81740MTF

SOT-23 NPN Bipolar Transistors for General Purpose Amplification
MJH6287G

MJH6287G

The MJH6287G is a high-voltage