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MMBT4403-7-F

Small Signal Bipolar Transistor MMBT4403-7-F

Quantity Unit Price(USD) Ext. Price
20 $0.023 $0.46
200 $0.020 $4.00
600 $0.018 $10.80
3000 $0.016 $48.00
9000 $0.015 $135.00
21000 $0.015 $315.00

Inventory:5,881

*The price is for reference only.
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Overview of MMBT4403-7-F

The MMBT4403-7-F is a popular choice for designers who require a versatile, cost-effective, and reliable transistor solution. With its small footprint and high reliability, this general-purpose PNP bipolar junction transistor (BJT) from Diodes Incorporated is ideal for low-power applications, offering a maximum collector current of 600mA and a collector-emitter voltage of -40V. Whether you are working on space-constrained PCB designs or require a transistor solution that meets environmental regulations, the MMBT4403-7-F has you covered. Its RoHS compliance ensures it meets environmental regulations, while its wide operating temperature range of -55°C to +150°C makes it suitable for use in various environmental conditions

Key Features

  • Epitaxial Planar Die Construction
  • Complementary NPN Type Available (MMBT4401)
  • Ideal for Medium Power Amplification and Switching
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability

Application

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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Diodes Incorporated Product Category Transistors (BJT) - Single
Series MMBT44 Packaging Alternate Packaging
Unit-Weight TO-236-3, SC-59, SOT-23-3 Mounting-Style Single
Package-Case 300mW Mounting-Type PNP
Supplier-Device-Package 600mA Configuration 40V
Power-Max 100 @ 150mA, 2V Transistor-Type 200MHz
Electric current collectors 300 mW Voltage-Collector-Emitter-Breakdown-Max - 40 V
DC-Current-Gain-hFE-Min-Ic-Vce - 40 V Vce saturation 200 MHz
Current-Collector-Cutoff-Max 300

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