MJL4281A
Bipolar Transistors - BJT 15A 350V 230W NPN
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $1.479 | $1.48 |
10 | $1.283 | $12.83 |
25 | $1.160 | $29.00 |
100 | $1.035 | $103.50 |
500 | $0.979 | $489.50 |
1000 | $0.954 | $954.00 |
Inventory:8,997
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : MJL4281A
-
Package/Case : TO-264-3
-
Brand : Onsemi
-
Components Classification : Single Bipolar Transistors
-
Datesheet : MJL4281A DataSheet (PDF)
-
Series : MJL4281A
Overview of MJL4281A
The MJL4281A and MJL4302A Bipolar Complementary Audio Power Transistors are power transistors for high power audio.
Key Features
- - Low Thermal Runaway
- - High Surge Current Handling
- - Fast Response Time
- - Wide Operating Temperature Range
- - Low Dropout Voltage
- - High PSRR
Application
- Professional sound system
- Amplify your music
- Top quality audio
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | N |
Mounting Style | Through Hole | Package / Case | TO-264-3 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 350 V | Collector- Base Voltage VCBO | 350 V |
Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 1 V |
Maximum DC Collector Current | 15 A | Pd - Power Dissipation | 230 W |
Gain Bandwidth Product fT | 35 MHz | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C | Brand | onsemi |
Continuous Collector Current | 15 A | DC Collector/Base Gain hfe Min | 80 |
Height | 26.4 mm | Length | 20.3 mm |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 25 |
Subcategory | Transistors | Technology | Si |
Width | 5.3 mm | Unit Weight | 0.352740 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![MJ4502](/files/uploads/product/s/c124915ec4c749c0b1070141068b9dd9.webp)
MJ4502
Trans GP BJT PNP 90V 30A 200000mW 3-Pin(2+Tab) TO-3 Tray
![MJW21196](/files/uploads/product/s/852d179abda942d19aa3557809255f97.webp)
MJW21196
Compact TO-package ensures reliable performance and easy installatio
![MJE18004G](/files/uploads/product/s/6c9372b87c614fa395138645643b9ea8.webp)
MJE18004G
Characteristics of this bipolar transistor include a high voltage and power rating, as well as a low current and voltage capability
![MJD127T4G](/files/uploads/product/s/4209f90526a24d4ca505c0de84691a51.webp)
MJD127T4G
ON Semiconductor MJD127T4G PNP Darlington Transistor
![MJD350T4G](/files/uploads/product/s/1173a7e199274014a839d81a611ed387.webp)
MJD350T4G
Transistor General Purpose Bipolar Junction PNP 300V 0.5A 1560mW 3-Pin(2+Tab) DPAK Tape and Reel
![MJD45H11T4G](/files/uploads/product/s/6010b8d54d73486288ba86715c9f9a47.webp)
MJD45H11T4G
80V PNP Transistor with 8A Current Rating and 1750mW Power Dissipation in DPAK Package
![MJ11021](/img/package/to-3.jpg)
MJ11021
Transistors designed for high power applications
![MJ15002](/img/package/to3.jpg)
MJ15002
PNP Bipolar Junction Transistor MJ15002 comes encased in a TO-204AA package
![MJ3001](/files/uploads/product/s/1c0ca92107774952a59d819b77a18c81.webp)
MJ3001
Trans Darlington NPN 80V 10A 150000mW 3-Pin(2+Tab) TO-3 Bag
![MJD31CAJ](/img/package/dpak2.jpg)
MJD31CAJ
NPN Bipolar Junction Transistor with Automotive Grade Quality
![MJL21195G](/img/package/to264.jpg)
MJL21195G
Product MJL21195G from ON Semiconductor is a PNP bipolar junction transistor
![BSM300GA120DN2](/img/product.png)
BSM300GA120DN2
IGBT Module for IGBT Transistor N-CH 1200V 430A 2500mW
![IRF6218STRLPBF](/img/package/d2pak.jpg)
IRF6218STRLPBF
IRF6218STRLPBF - Power MOSFET with 150V Voltage Rating and 27A Current Capability
![SIR182DP-T1-RE3](/img/package/power33.jpg)
SIR182DP-T1-RE3
Trans MOSFET N-CH 60V 117A 8-Pin PowerPAK SO EP T/R
![BC847CW,115](/img/package/sot323.jpg)
BC847CW,115
small plastic package housing general-purpose npn transistors in a surface-mount design
![IRFH7545TRPBF](/files/uploads/product/s/821aad6b9cfb475299afced5d853f704.webp)
IRFH7545TRPBF
N-channel MOSFET IRFH7545TRPBF 60V 85A PQFN
![BUL1102EFP](/img/package/to220f.jpg)
BUL1102EFP
NPN 450V 4A Power Bipolar Junction Transistor in TO-220FP Package
![MMBTA92LT1](/img/package/sc74.jpg)
MMBTA92LT1
MMBTA92LT1, classified as a BJT, is a crucial component in electronic circuits for its signal amplification and switching capabilities
![SIR470DP-T1-GE3](/img/package/power33.jpg)
SIR470DP-T1-GE3
VISHAY - SIR470DP-T1-GE3 - MOSFET, N CHANNEL, 40V, 60A, POWERPAK SO
![SISA12ADN-T1-GE3](/img/package/power33.jpg)
SISA12ADN-T1-GE3
This MOSFET is optimized for power electronics applications requiring high current and voltage ratings