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JANTX2N3019

Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39 Box

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Overview of JANTX2N3019

The JANTX2N3019 is a high-frequency, low-power NPN transistor designed for use in various electronic applications. This transistor offers reliable performance and low noise operation, making it suitable for amplification and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Emitter terminal for the NPN transistor.
  • Base (B): Base terminal for controlling the transistor's operation.
  • Collector (C): Collector terminal for the NPN transistor.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the JANTX2N3019 transistor for a visual representation.

Key Features

  • High-Frequency Operation: The JANTX2N3019 is capable of operating at high frequencies, making it suitable for RF applications.
  • Low Power Consumption: This transistor offers low power dissipation, making it energy-efficient.
  • Low Noise: With low noise characteristics, the JANTX2N3019 is suitable for low-level signal amplification.
  • High Gain: The transistor provides high voltage gain, enhancing its amplification capabilities.
  • Wide Temperature Range: Operates reliably over a wide temperature range, suitable for various environmental conditions.

Note: For detailed technical specifications, please refer to the JANTX2N3019 datasheet.

Application

  • RF Amplification: Ideal for use in RF amplification circuits due to its high-frequency operation.
  • Switching Circuits: Suitable for switching applications where low power consumption and high reliability are required.
  • Signal Amplification: Used in signal amplification circuits where low noise and high gain are essential.

Functionality

The JANTX2N3019 is an NPN transistor designed for high-frequency operation and low-power applications. It offers reliable performance and is suitable for various electronic circuits requiring amplification or switching.

Usage Guide

  • Connection: Connect the emitter (E), base (B), and collector (C) terminals according to the circuit requirements.
  • Biasing: Apply the appropriate bias voltage to the base terminal to control the transistor's operation.
  • Load: Connect the load to the collector terminal for amplification or switching purposes.

Frequently Asked Questions

Q: Is the JANTX2N3019 suitable for low-power applications?
A: Yes, the JANTX2N3019 offers low power consumption, making it suitable for battery-powered or energy-efficient electronic devices.

Equivalent

For similar functionalities, consider these alternatives to the JANTX2N3019:

  • 2N3904: A general-purpose NPN transistor commonly used for amplification and switching applications.
  • BC547: Another versatile NPN transistor suitable for various electronic circuits.
  • 2N2222: Widely used NPN transistor with high gain and low saturation voltage.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ECCN (US) EAR99 Part Status Active
Automotive No PPAP No
Type NPN Category Bipolar Power
Material Si Configuration Single
Number of Elements per Chip 1 Maximum Collector Base Voltage (V) 140
Maximum Collector-Emitter Voltage (V) 80 Maximum Emitter Base Voltage (V) 7
Maximum Base Emitter Saturation Voltage (V) 1.1@15mA@150mA Maximum Collector-Emitter Saturation Voltage (V) 0.5@50mA@500mA|0.2@15mA@150mA
Maximum DC Collector Current (A) 1 Minimum DC Current Gain 15@1A@10V|50@500mA@10V|100@150mA@10V|90@10mA@10V|[email protected]@10V
Maximum Power Dissipation (mW) 800 Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200 Packaging Tray
Supplier Temperature Grade Military Diameter 9.4(Max)
Mounting Through Hole Package Height 6.6(Max)
PCB changed 3 Standard Package Name TO-205-AF
Supplier Package TO-39 Pin Count 3
Lead Shape Through Hole

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