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IXYP20N65C3D1

TO-220AB packaged IGBT chip capable of handling up to 650 volts and 50 amps

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Overview of IXYP20N65C3D1

The IXYP20N65C3D1 is a high voltage, high speed IGBT (Insulated Gate Bipolar Transistor) designed for various power electronic applications. It features a 650V voltage rating and high switching performance, making it suitable for use in power supplies, inverters, and motor control systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Connect to the high voltage power supply
  • Emitter (E): Ground connection
  • G (Gate): Input terminal for controlling the IGBT switching
  • V CC : Positive power supply for driving the gate
  • V BS : Bootstrap supply for high-side gate drive

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXYP20N65C3D1 IGBT for a visual representation.

Key Features

  • High Voltage Rating: The IXYP20N65C3D1 features a 650V voltage rating, suitable for high voltage applications.
  • High Speed Switching: Provides fast switching characteristics for efficient power control.
  • Low Saturation Voltage: Offers low saturation voltage for reduced power dissipation.
  • Bootstrap Function: Incorporates a bootstrap function for high-side gate drive applications.
  • Integrated Diode: Built-in diode for free-wheeling or regenerative braking applications.

Note: For detailed technical specifications, please refer to the IXYP20N65C3D1 datasheet.

Application

  • Power Supplies: Ideal for use in high voltage power supply circuits.
  • Inverters: Suitable for motor drive inverters and general purpose inverters.
  • Motor Control: Used in motor control systems for efficient power switching.

Functionality

The IXYP20N65C3D1 is a high voltage IGBT designed for high speed switching and power control in various electronic systems. It provides reliable and efficient performance in power supply, inverter, and motor control applications.

Usage Guide

  • High Voltage Connection: Connect the collector (C) pin to the high voltage power supply.
  • Gate Control: Apply appropriate voltage signals to the gate (G) pin for controlling the switching of the IGBT.
  • Bootstrap Supply: Connect the VBS pin to the bootstrap supply for high-side gate drive functionality.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IXYP20N65C3D1?
A: The IXYP20N65C3D1 features a maximum voltage rating of 650V, suitable for high voltage applications.

Q: Does the IXYP20N65C3D1 require an external diode for freewheeling applications?
A: No, the IXYP20N65C3D1 incorporates an integrated diode for freewheeling or regenerative braking applications.

Equivalent

For similar functionalities, consider these alternatives to the IXYP20N65C3D1:

  • IXGP20N65C3D1: A similar IGBT with comparable specifications from the same manufacturer, offering compatibility with the IXYP20N65C3D1.
  • FGL40N120AND: This is a high voltage IGBT from Fairchild Semiconductor, providing similar high-speed switching and voltage ratings.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Mounting Style Through Hole
Configuration Single Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 2.5 V Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 50 A Pd - Power Dissipation 200 W
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Series Planar Brand IXYS
Product Type IGBT Transistors Factory Pack Quantity 50
Subcategory IGBTs Tradename XPT, GenX3
Unit Weight 0.105822 oz

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