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IXXH110N65C4

880W 234A 650V PT Through-hole TO-247AD IGBTs ROHS

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Overview of IXXH110N65C4

The IXXH110N65C4 is a high-power N-channel MOSFET designed for efficient power switching applications. It features a low on-resistance and high current-handling capacity, making it suitable for high-power electronic systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VCC: Positive Power Supply
  • GND: Ground
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXXH110N65C4 MOSFET for a visual representation.

Key Features

  • High Power Handling: The IXXH110N65C4 can handle high power levels, suitable for demanding applications.
  • Low On-Resistance: With its low on-resistance, this MOSFET minimizes power loss and heat generation during operation.
  • Fast Switching Speed: Offers fast switching times for efficient power control.
  • Temperature Stability: Designed to operate reliably over a wide temperature range, ensuring stable performance in varying conditions.
  • Overcurrent Protection: Includes built-in protection features to safeguard the MOSFET from excessive current levels.

Note: For detailed technical specifications, please refer to the IXXH110N65C4 datasheet.

Application

  • Power Electronics: Ideal for use in power supplies, motor control, and inverters.
  • Industrial Automation: Suitable for high-power switching applications in industrial automation systems.
  • Renewable Energy: Used in solar inverters and wind turbine systems for efficient power conversion.

Functionality

The IXXH110N65C4 MOSFET is specifically designed for high-power switching applications, providing efficient power control and reliable performance in various electronic systems.

Usage Guide

  • Gate Drive: Apply appropriate gate voltage to turn the MOSFET on and off effectively.
  • Heat Management: Ensure proper heat sinking to maintain the MOSFET within its safe operating temperature range.
  • Current Limiting: Implement current limiting circuits to protect the MOSFET from excessive current levels.

Frequently Asked Questions

Q: What is the maximum current rating of the IXXH110N65C4?
A: The IXXH110N65C4 has a maximum current rating of X amps.

Q: Is the IXXH110N65C4 suitable for high-frequency switching applications?
A: Yes, the IXXH110N65C4 is capable of high-speed switching suitable for various applications.

Equivalent

For similar functionalities, consider these alternatives to the IXXH110N65C4:

  • IXFK120N65X2: Another high-power N-channel MOSFET with comparable performance specifications.
  • IPW65R041CFD: This MOSFET offers similar power handling capabilities and is suitable for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active VCES - Collector-Emitter Voltage (V) 650
Collector Current @ 25 ℃ (A) 235 VCE(sat) - Collector-Emitter Saturation Voltage (V) 2.35
Fall Time [Inductive Load] (ns) 35 Configuration Single
Package Type TO-247 Thermal resistance [junction-case] [IGBT] (K/W) 0.17
Turn-off Energy @ 150 ℃ (mJ) 0.9 Collector Current @ 110 ℃ (A) 110

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