IXXH110N65C4
880W 234A 650V PT Through-hole TO-247AD IGBTs ROHS
Inventory:8,041
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Part Number : IXXH110N65C4
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Package/Case : TO247AD-3
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Brand : IXYS
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Components Classification : Single IGBTs
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Datesheet : IXXH110N65C4 DataSheet (PDF)
The IXXH110N65C4 is a high-power N-channel MOSFET designed for efficient power switching applications. It features a low on-resistance and high current-handling capacity, making it suitable for high-power electronic systems. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IXXH110N65C4 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IXXH110N65C4 datasheet. Functionality The IXXH110N65C4 MOSFET is specifically designed for high-power switching applications, providing efficient power control and reliable performance in various electronic systems. Usage Guide Q: What is the maximum current rating of the IXXH110N65C4? Q: Is the IXXH110N65C4 suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the IXXH110N65C4:Overview of IXXH110N65C4
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The IXXH110N65C4 has a maximum current rating of X amps.
A: Yes, the IXXH110N65C4 is capable of high-speed switching suitable for various applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Status | Active | VCES - Collector-Emitter Voltage (V) | 650 |
Collector Current @ 25 ℃ (A) | 235 | VCE(sat) - Collector-Emitter Saturation Voltage (V) | 2.35 |
Fall Time [Inductive Load] (ns) | 35 | Configuration | Single |
Package Type | TO-247 | Thermal resistance [junction-case] [IGBT] (K/W) | 0.17 |
Turn-off Energy @ 150 ℃ (mJ) | 0.9 | Collector Current @ 110 ℃ (A) | 110 |
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