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IXTQ76N25T

The IXTQ76N25T is a MOSFET capable of handling 76 Amps and 250 Volts, with an on-resistance of 39 milliohms

Quantity Unit Price(USD) Ext. Price
1 $4.152 $4.15
10 $3.642 $36.42
30 $3.340 $100.20
90 $3.034 $273.06
510 $2.894 $1,475.94
990 $2.830 $2,801.70

Inventory:9,028

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Overview of IXTQ76N25T

The IXTQ76N25T is a high-performance MOSFET transistor that is designed for use in a variety of power electronics applications. It features a low on-resistance and high-speed switching capabilities, making it an ideal choice for applications such as motor drives, power supplies, and other power conversion circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • D: Drain terminal
  • G: Gate terminal
  • S: Source terminal

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the IXTQ76N25T MOSFET for a more visual representation.

Key Features

  • Low On-Resistance: The IXTQ76N25T features a low on-resistance of 76 milliohms, which helps to minimize power losses and improve efficiency.
  • High Switching Speed: This MOSFET offers high-speed switching capabilities, enabling fast transitions between on and off states, which is important for many power electronics applications.
  • High Voltage Rating: With a maximum drain-source voltage rating of 250V, the IXTQ76N25T can be used in high-voltage power electronics circuits.
  • Compact Package: The IXTQ76N25T is available in a small and space-saving TO-220 package, making it suitable for use in compact design layouts.
  • Robust Design: The IXTQ76N25T is designed to withstand high levels of electrostatic discharge (ESD) and short-circuit events, ensuring reliable operation in harsh environments.

Note: For detailed technical specifications, please refer to the IXTQ76N25T datasheet.

Application

  • Motor Drives: The IXTQ76N25T is widely used in motor drive applications, such as those found in industrial equipment, household appliances, and electric vehicles.
  • Power Supplies: This MOSFET is suitable for use in power supply circuits, including switching power supplies and power factor correction (PFC) circuits.
  • Inverters: The IXTQ76N25T can be used in inverter circuits, which convert DC power to AC power for various applications, such as solar power systems and uninterruptible power supplies (UPS).

Functionality

The IXTQ76N25T is a high-performance N-channel MOSFET transistor that can be used as a switching device in a variety of power electronics applications. Its low on-resistance and high-speed switching capabilities make it an efficient and reliable choice for power conversion and control circuits.

Usage Guide

  • Power Supply: Connect the drain (D) terminal to the positive power supply, the source (S) terminal to the ground or negative supply, and the gate (G) terminal to the control signal.
  • Gate Drive: Provide a suitable gate drive signal to control the switching of the MOSFET. Ensure that the gate voltage is within the recommended range specified in the datasheet.
  • Thermal Management: Consider proper heatsinking or cooling methods to maintain the MOSFET within its safe operating temperature range, especially in high-power applications.

Frequently Asked Questions

Q: What is the maximum drain-source voltage rating of the IXTQ76N25T?
A: The IXTQ76N25T has a maximum drain-source voltage rating of 250V, making it suitable for use in high-voltage power electronics circuits.

Q: Can the IXTQ76N25T be used in motor drive applications?
A: Yes, the IXTQ76N25T is widely used in motor drive applications due to its low on-resistance and high-speed switching capabilities, which are important for efficient motor control.

Equivalent

For similar functionalities, consider these alternatives to the IXTQ76N25T:

  • IXTQ92N25T: This is a higher-current rated version of the IXTQ76N25T, with a higher drain current capability and slightly higher on-resistance.
  • IXTQ65N25T: This is a lower-current rated version of the IXTQ76N25T, with a lower drain current capability and slightly lower on-resistance.
  • IRFP260N: This is a similar N-channel MOSFET from Infineon Technologies, offering comparable performance and characteristics to the IXTQ76N25T.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 250 Maximum On-Resistance @ 25 ℃ (Ohm) 0.044
Continuous Drain Current @ 25 ℃ (A) 76 Gate Charge (nC) 92
Input Capacitance, CISS (pF) 4920 Thermal resistance [junction-case] (K/W) 0.27
Configuration Single Package Type TO-3P
Typical Reverse Recovery Time (ns) 148 Power Dissipation (W) 460
Sample Request No Check Stock Yes

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