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IXTQ130N10T

N-channel power MOSFET with a maximum voltage rating of 100V and a continuous drain current of 130A

Quantity Unit Price(USD) Ext. Price
1 $3.267 $3.27
10 $2.920 $29.20
30 $2.703 $81.09
90 $2.480 $223.20
450 $2.141 $963.45
900 $2.098 $1,888.20

Inventory:5,764

*The price is for reference only.
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Overview of IXTQ130N10T

The IXTQ130N10T Trench Gate Power MOSFET sets a new standard for low voltage/high current applications with its cutting-edge technology and exceptional attributes. Its ultra-low RDS(on) ensures optimal power efficiency, while the wide operating temperature range enhances its suitability for challenging conditions. From automobiles to industrial settings, this MOSFET excels in delivering reliable and consistent performance

Key Features

  • Sustainable Power Source
  • Compact Design Advantage
  • High Temperature Resistance

Application

  • Excellent for battery chargers
  • Perfect for DC choppers
  • Great for AC motor drives

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series Trench Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.1mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5080 pF @ 25 V Power Dissipation (Max) 360W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3
Base Product Number IXTQ130

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