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IXTK200N10L2

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Overview of IXTK200N10L2

The IXTK200N10L2 Power MOSFET is a cutting-edge solution designed for applications that demand high performance and reliability in current saturation regions. With its low thermal resistances and high power density, this device is a game-changer in the field of Power MOSFET technology. Its extended Forward Bias Safe Operating Areas (FBSOA) make it ideal for linear-mode operation, where traditional MOSFETs may fail due to thermal and electrical stresses. By suppressing electro-thermal instability, the LinearL2™ Power MOSFET ensures a larger operating window, reducing the risk of device failure under extreme conditions

Key Features

  • Silicon nitride passivation for isolation
  • ESD protection for data lines
  • Low noise and distortion ensured

Application

  • Power distribution units
  • Voltage regulators

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series Linear L2™ Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 540 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V Power Dissipation (Max) 1040W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-264 (IXTK) Package / Case TO-264-3, TO-264AA
Base Product Number IXTK200

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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