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IXTH88N30P

Featuring N-channel configuration

Inventory:9,528

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Overview of IXTH88N30P

The IXTH88N30P is a high-power MOSFET transistor designed for use in power electronics applications. This N-channel enhancement-mode power MOSFET features a low on-state resistance and high current capability, making it ideal for high-power switching and amplification.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXTH88N30P MOSFET for a visual representation.

Key Features

  • High Power Capability: The IXTH88N30P can handle high power levels, making it suitable for power electronics applications.
  • Low On-State Resistance: With a low RDS(on), this MOSFET provides efficient power dissipation and low voltage drop during operation.
  • Enhancement-Mode Design: The enhancement-mode operation simplifies the driving circuitry required for switching applications.
  • Fast Switching Speed: The IXTH88N30P offers fast switching times, enabling rapid transitions between on and off states.
  • High Current Rating: This MOSFET is capable of handling high currents, allowing for robust performance in demanding conditions.

Note: For detailed technical specifications, please refer to the IXTH88N30P datasheet.

Application

  • Power Electronics: Ideal for use in power supplies, motor controls, inverters, and other high-power electronic systems.
  • Switching Circuits: Suitable for switching applications where high current and low resistance are critical.
  • Audio Amplifiers: Can be used in audio amplifier circuits for efficient power delivery and amplification.

Functionality

The IXTH88N30P MOSFET is designed for high-power applications where efficient switching and low on-resistance are essential. It provides reliable performance in a wide range of power electronics circuits.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the control circuitry for switching the MOSFET on and off.
  • Drain and Source Connections: Connect the load circuit between the drain (D) and source (S) pins of the MOSFET.

Frequently Asked Questions

Q: Is the IXTH88N30P suitable for high-frequency switching applications?
A: While the IXTH88N30P offers fast switching speeds, it is recommended to refer to the datasheet for specific frequency capabilities.

Equivalent

For similar functionalities, consider these alternatives to the IXTH88N30P:

  • IRF3205: A widely used power MOSFET with comparable specifications to the IXTH88N30P for high-power applications.
  • FDP8878: This MOSFET offers similar high-current capabilities and low on-resistance for power electronics designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-247-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 300 V
Id - Continuous Drain Current 88 A Rds On - Drain-Source Resistance 40 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 180 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 600 W
Channel Mode Enhancement Series IXTH88N30
Brand IXYS Configuration Single
Fall Time 25 ns Product Type MOSFET
Rise Time 24 ns Factory Pack Quantity 30
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 96 ns Typical Turn-On Delay Time 25 ns
Unit Weight 0.211644 oz

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