IXTH88N30P
Featuring N-channel configuration
Inventory:9,528
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Part Number : IXTH88N30P
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Package/Case : TO247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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Datesheet : IXTH88N30P DataSheet (PDF)
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Series : IXTH88N30
The IXTH88N30P is a high-power MOSFET transistor designed for use in power electronics applications. This N-channel enhancement-mode power MOSFET features a low on-state resistance and high current capability, making it ideal for high-power switching and amplification. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IXTH88N30P MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IXTH88N30P datasheet. Functionality The IXTH88N30P MOSFET is designed for high-power applications where efficient switching and low on-resistance are essential. It provides reliable performance in a wide range of power electronics circuits. Usage Guide Q: Is the IXTH88N30P suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the IXTH88N30P:Overview of IXTH88N30P
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: While the IXTH88N30P offers fast switching speeds, it is recommended to refer to the datasheet for specific frequency capabilities.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-247-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 300 V |
Id - Continuous Drain Current | 88 A | Rds On - Drain-Source Resistance | 40 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 180 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 600 W |
Channel Mode | Enhancement | Series | IXTH88N30 |
Brand | IXYS | Configuration | Single |
Fall Time | 25 ns | Product Type | MOSFET |
Rise Time | 24 ns | Factory Pack Quantity | 30 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 96 ns | Typical Turn-On Delay Time | 25 ns |
Unit Weight | 0.211644 oz |
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