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IXTH30N60L2

N-channel MOSFET transistor capable of handling 30A at 600V in TO-247AD package

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Overview of IXTH30N60L2

The IXTH30N60L2 is a high voltage power MOSFET designed for various power electronics applications. It features a high current rating and low on-state resistance, making it suitable for power switching and amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXTH30N60L2 MOSFET for a visual representation.

Key Features

  • High Voltage Rating: The IXTH30N60L2 can withstand high voltage levels, making it suitable for high-power applications.
  • Low On-State Resistance: With a low RDS(on) value, this MOSFET minimizes power dissipation and heat generation.
  • High Current Capability: Capable of handling significant currents, ideal for power switching applications.
  • Fast Switching Speed: The IXTH30N60L2 offers rapid switching characteristics, ensuring efficient operation in dynamic systems.
  • Enhanced Thermal Performance: Designed for improved thermal dissipation, allowing for reliable performance under high load conditions.

Note: For detailed technical specifications, please refer to the IXTH30N60L2 datasheet.

Application

  • Power Supplies: Ideal for use in high voltage power supply units and inverters.
  • Motor Control: Suitable for motor drive applications where high current and voltage capabilities are required.
  • Switching Circuits: Used in various power switching circuits for efficient control of power flow.

Functionality

The IXTH30N60L2 power MOSFET delivers high performance in power switching applications, offering high voltage handling capabilities and low on-state resistance for efficient power management.

Usage Guide

  • Gate Drive: Provide adequate gate drive voltage for proper turn-on and turn-off of the MOSFET.
  • Heat Management: Ensure proper heat sinking to maintain the MOSFET within its temperature limits under load.
  • Load Connection: Connect the load to the drain terminal for power flow control.

Frequently Asked Questions

Q: Can the IXTH30N60L2 be used in high-frequency applications?
A: While the IXTH30N60L2 has fast switching speed, ensure compatibility with the specific frequency requirements of your application.

Equivalent

For similar functionalities, consider these alternatives to the IXTH30N60L2:

  • IRF840: A power MOSFET with comparable specifications and usage in power electronics applications.
  • FDP8870: This MOSFET offers similar high voltage and current capabilities for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 600 Maximum On-Resistance @ 25 ℃ (Ohm) 0.24
Continuous Drain Current @ 25 ℃ (A) 30 Gate Charge (nC) 335
Input Capacitance, CISS (pF) 10700 Thermal resistance [junction-case] (K/W) 0.23
Configuration Single Package Type TO-247
Typical Reverse Recovery Time (ns) 710 Power Dissipation (W) 540
Sample Request Yes Check Stock Yes

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