IXTH30N60L2
N-channel MOSFET transistor capable of handling 30A at 600V in TO-247AD package
Inventory:7,767
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Part Number : IXTH30N60L2
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Package/Case : TO247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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Datesheet : IXTH30N60L2 DataSheet (PDF)
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Series : IXTH30N60
The IXTH30N60L2 is a high voltage power MOSFET designed for various power electronics applications. It features a high current rating and low on-state resistance, making it suitable for power switching and amplification tasks. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IXTH30N60L2 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IXTH30N60L2 datasheet. Functionality The IXTH30N60L2 power MOSFET delivers high performance in power switching applications, offering high voltage handling capabilities and low on-state resistance for efficient power management. Usage Guide Q: Can the IXTH30N60L2 be used in high-frequency applications? For similar functionalities, consider these alternatives to the IXTH30N60L2:Overview of IXTH30N60L2
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: While the IXTH30N60L2 has fast switching speed, ensure compatibility with the specific frequency requirements of your application.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Drain-Source Voltage (V) | 600 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.24 |
Continuous Drain Current @ 25 ℃ (A) | 30 | Gate Charge (nC) | 335 |
Input Capacitance, CISS (pF) | 10700 | Thermal resistance [junction-case] (K/W) | 0.23 |
Configuration | Single | Package Type | TO-247 |
Typical Reverse Recovery Time (ns) | 710 | Power Dissipation (W) | 540 |
Sample Request | Yes | Check Stock | Yes |
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