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IXTH21N50

Low on-resistance power MOSFET rated for 500V and 21 Amps

Quantity Unit Price(USD) Ext. Price
1 $18.537 $18.54
210 $7.396 $1,553.16
510 $7.149 $3,645.99
990 $7.027 $6,956.73

Inventory:7,568

*The price is for reference only.
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Overview of IXTH21N50

IXYS Corporation introduces the IXTH21N50 power MOSFET, designed for high voltage applications with a robust 500 volt breakdown voltage (Vds). This MOSFET is built on advanced technology, providing low on-resistance (Rds(on)) to minimize power losses and improve efficiency in high-power circuits. With a maximum continuous drain current (Id) rating of 21 amps, it is well-suited for power switching applications such as power supplies, motor control, and lighting systems. The compact TO-247 package allows for easy mounting and efficient thermal management, while its high switching speed and low gate charge (Qg) and gate-to-source charge (Qgs) enable precise control and high-frequency operation

Key Features

  • Superior signal-to-noise ratio
  • High-speed processing
  • Reliable operation
  • Compact and lightweight design

Application

  • Reliable performance
  • Fast response time
  • Cost-effective solution

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 500 Maximum On-Resistance @ 25 ℃ (Ohm) 0.25
Continuous Drain Current @ 25 ℃ (A) 21 Gate Charge (nC) 160
Input Capacitance, CISS (pF) 4200 Thermal resistance [junction-case] (K/W) 0.42
Configuration Single Package Type TO-247
Typical Reverse Recovery Time (ns) 600 Power Dissipation (W) 300
Sample Request No

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