IXTH130N20T
effect transistor, power transistor, IXTH130N20T, product description
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $5.814 | $5.81 |
| 200 | $2.251 | $450.20 |
| 500 | $2.172 | $1,086.00 |
| 1000 | $2.132 | $2,132.00 |
Inventory:7,358
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Part Number : IXTH130N20T
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Package/Case : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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Datesheet : IXTH130N20T DataSheet (PDF)
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Series : IXTH130N20
Overview of IXTH130N20T
Meet the IXTH130N20T, a top-of-the-line Trench Gate Power MOSFET that is specifically tailored for low voltage, high current applications. Offering an extremely low RDS(on) value, this MOSFET ensures minimal power dissipation, which can significantly improve energy efficiency. Its wide operating temperature range of -40 °C to 175 °C makes it a versatile option for a variety of applications, including automotive systems and other demanding environments where reliability is key. When it comes to performance and durability, the IXTH130N20T stands out as a robust and efficient solution that can meet the challenges of today's complex technological landscape
Key Features
- Wide Operating Range
- High Surge Currents
- Reverse Recovery Time
- Faster Switching Times
Application
- Robust power handling capabilities
- Flexible mounting options
- Cost-effective solution
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | LITTELFUSE INC | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Samacsys Manufacturer | LITTELFUSE |
| Additional Feature | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 1000 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 200 V | Drain Current-Max (ID) | 130 A |
| Drain-source On Resistance-Max | 0.016 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 122 pF | JEDEC-95 Code | TO-247AD |
| JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
| Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 830 W | Pulsed Drain Current-Max (IDM) | 320 A |
| Surface Mount | NO | Terminal Finish | MATTE TIN |
| Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | Series | Trench |
| Package | Tube | Product Status | Active |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 16mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA | Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 25 V |
| Power Dissipation (Max) | 830W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Supplier Device Package | TO-247 (IXTH) |
| Package / Case | TO-247-3 | Base Product Number | IXTH130 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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