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IXTA76P10T

76A Three-Pin Power MOSFET

Quantity Unit Price(USD) Ext. Price
1 $3.530 $3.53
10 $3.097 $30.97
50 $2.841 $142.05
100 $2.582 $258.20
500 $2.461 $1,230.50
1000 $2.407 $2,407.00

Inventory:8,189

*The price is for reference only.
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Overview of IXTA76P10T

The IXTA76P10T power MOSFET transistor from IXYS Corporation is a top-of-the-line component designed for high-efficiency power switching applications. With a drain-source voltage rating of 100V and a continuous drain current rating of 76A, this N-channel enhancement mode device delivers reliable performance in demanding environments. Its low on-resistance of 10mOhms minimizes power loss, ensuring high efficiency during operation. Additionally, its low gate charge of 45nC enables fast switching speeds and reduces switching losses, making it an ideal choice for applications requiring precision and speed

Key Features

  • Small size
  • Economical price
  • Easy installation

Application

  • Energy-efficient operation
  • Customizable settings
  • Long-lasting durability

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series TrenchP™ Package Tube
Product Status Active FET Type P-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 76A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 38A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 197 nC @ 10 V Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 13700 pF @ 25 V Power Dissipation (Max) 298W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package TO-263AA Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number IXTA76

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

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