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IXFR44N50Q

500V rated voltage N Channel MOSFET with a maximum current of 34A

Quantity Unit Price(USD) Ext. Price
1 $23.501 $23.50
200 $9.096 $1,819.20
500 $8.777 $4,388.50
1000 $8.617 $8,617.00

Inventory:5,450

*The price is for reference only.
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Overview of IXFR44N50Q

The Q-Class series device IXFR44N50Q is a standout Power MOSFET known for its reliability and superior performance in various applications. Designed for both hard switching and resonant mode use, these HiPerFET™ devices feature low gate charge and exceptional ruggedness, ensuring efficiency and durability. The fast intrinsic diode further contributes to their impressive functionality, making them a popular choice for industrial settings. With a variety of standard industrial packages available, including isolated types, the IXFR44N50Q caters to different needs and preferences, providing users with a high-quality Power MOSFET option that meets their requirements effectively

Key Features

  • Low noise and radiation for peaceful operation
  • High isolation voltage for safety assurance
  • Ruggedized construction for harsh environment
  • Sophisticated thermal management for reliable performance

Application

  • Compact and reliable
  • High efficiency operation
  • Integrated protection features

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™, Q Class Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 22A, 10V Vgs(th) (Max) @ Id 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 25 V Power Dissipation (Max) 310W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package ISOPLUS247™ Package / Case TO-247-3
Base Product Number IXFR44

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