• IXFR24N50Q TO247-3
IXFR24N50Q TO247-3

IXFR24N50Q

MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23

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Overview of IXFR24N50Q

In conclusion, the IXFR24N50Q is a high-performing MOSFET transistor that offers impressive power handling capabilities, efficiency, and ease of use. Its specifications make it a standout choice for high-voltage applications, and its TO-247 package ensures reliability and longevity. Whether it's for switching power supplies or power inverters, the IXFR24N50Q is a dependable solution for efficient power conversion with minimal power loss

Key Features

  • This is a high-speed, low-gate-charge MOSFET
  • Suitable for motor control and power supplies
  • Features fast switching speed and low on-resistance

Application

  • Suitable for inverters
  • High efficiency required
  • Industrial use

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-247-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 22 A Rds On - Drain-Source Resistance 230 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 250 W
Channel Mode Enhancement Tradename HyperFET
Series HiPerFET Brand IXYS
Configuration Single Fall Time 16 ns
Height 21.34 mm Length 16.13 mm
Product Type MOSFET Rise Time 30 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 55 ns
Typical Turn-On Delay Time 28 ns Width 5.21 mm
Unit Weight 0.211644 oz

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