IXFQ50N50P3
Trans MOSFET N-CH 500V 50A 3-Pin(3+Tab) TO-3P
Inventory:5,676
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Part Number : IXFQ50N50P3
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Package/Case : TO-3P
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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Datesheet : IXFQ50N50P3 DataSheet (PDF)
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Series : IXFQ50N50
Overview of IXFQ50N50P3
Discover the cutting-edge capabilities of product IXFQ50N50P3, the newest addition to our PolarP3™ HiPerFET™ product family. As part of the benchmark high-performance Polar-Series product line, this product offers a high Figure of Merit (FOM) resulting from the multiplication of Qg and in RDS(on), providing a superior alternative to traditional super junction technologies. Noteworthy features include a 12 percent reduction in on-state resistance (Rdson), a 14 percent reduction in gate charge (Qg), and an outstanding increase of up to 20 percent in maximum power dissipation (Pd). The reduction in chip thicknesses has also contributed to lower thermal resistances, enhancing the overall power density of the device. With a focus on high performance and efficiency, the IXFQ50N50P3 promises to deliver exceptional value and performance for our customers
Key Features
- Safe operating area
- Overcurrent protection
- Fault detection circuitry
- Short-circuit protection
- Rugged design
Application
- Compact DC-DC converters
- Remote power monitoring
- Automated servo control
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | IXYS | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-3P-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 500 V | Id - Continuous Drain Current | 50 A |
Rds On - Drain-Source Resistance | 125 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 5 V | Qg - Gate Charge | 85 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 960 W | Channel Mode | Enhancement |
Tradename | HiPerFET | Series | IXFQ50N50 |
Brand | IXYS | Configuration | Single |
Product Type | MOSFET | Factory Pack Quantity | 30 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Unit Weight | 0.056438 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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