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IXFP5N100PM

Trans MOSFET N-CH 1KV 2.3A 3-Pin(3+Tab) TO-220FP

Inventory:7,269

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Overview of IXFP5N100PM

When it comes to power semiconductor devices, the Polar™ HiPerFETs (IXF..) are in a league of their own. Their unique combination of features, including low RDS(on), low RthJC, low Qg, and enhanced DV/DT capability, sets them apart from other products on the market. With a focus on optimizing performance and minimizing power losses, the IXFP5N100PM represents the pinnacle of power semiconductor technology, offering unparalleled benefits for both manufacturers and end-users

Key Features

  • Overvoltage Protection
  • Temperature Compensation
  • Soft Recovery Performance

Application

  • Customized Power Modules
  • Adaptive Battery Management
  • Sophisticated Motor Control

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer IXYS Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-220FP-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1 kV Id - Continuous Drain Current 2.3 A
Rds On - Drain-Source Resistance 2.8 Ohms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 33.4 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 42 W Channel Mode Enhancement
Tradename HiPerFET Series HiPerFET
Brand IXYS Configuration Single
Fall Time 37 ns Product Type MOSFET
Rise Time 13 ns Factory Pack Quantity 50
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 30 ns Typical Turn-On Delay Time 12 ns
Unit Weight 0.068784 oz

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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