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IXFM50N20

200-volt, 50-ampere MOSFET

Inventory:9,794

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Overview of IXFM50N20

The IXFM50N20 is a power MOSFET transistor designed for high-power switching applications. It features a low on-resistance and high current capability, making it suitable for use in power circuits and motor control systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFM50N20 MOSFET for a visual representation.

Key Features

  • High Power Handling: The IXFM50N20 can handle high currents and voltages, making it suitable for power electronics applications.
  • Low On-Resistance: With a low on-resistance, this MOSFET minimizes power losses and heat generation during switching.
  • Fast Switching Speed: The IXFM50N20 offers fast switching times, allowing for efficient power control in circuits.
  • Robust Construction: Designed for reliability, this MOSFET is built to withstand high power and temperature conditions.

Note: For detailed technical specifications, please refer to the IXFM50N20 datasheet.

Application

  • Power Supplies: Ideal for use in power supply circuits to regulate and control power output.
  • Motor Control: Suitable for motor control systems in industrial and automotive applications.
  • Inverters: Used in inverter circuits to convert DC power to AC power efficiently.

Functionality

The IXFM50N20 is a power MOSFET transistor that provides efficient power switching capabilities for various high-power applications, ensuring reliable performance and control.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate terminal for turning the MOSFET on and off.
  • Current Handling: Ensure the MOSFET is within its specified current and voltage ratings for safe operation.
  • Heat Management: Proper heat sinking may be required to dissipate heat generated during operation.

Equivalent

For similar functionalities, consider these alternatives to the IXFM50N20:

  • IRF3205: This power MOSFET offers comparable performance and current-handling capabilities to the IXFM50N20.
  • FQP30N06L: A cost-effective alternative with similar power ratings and switching characteristics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 200 Maximum On-Resistance @ 25 ℃ (Ohm) 0.045
Continuous Drain Current @ 25 ℃ (A) 50 Gate Charge (nC) 190
Input Capacitance, CISS (pF) 4400 Thermal resistance [junction-case] (K/W) 0.42
Configuration Single Power Dissipation (W) 298
Maximum Reverse Recovery (ns) 200 Sample Request No

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