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IXFK90N30

Power transistor with a high drain current capacity of 90A and a voltage tolerance of 300V

Quantity Unit Price(USD) Ext. Price
1 $41.971 $41.97
200 $16.747 $3,349.40
500 $16.188 $8,094.00
1000 $15.911 $15,911.00

Inventory:6,770

*The price is for reference only.
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Overview of IXFK90N30

The product IXFK90N30 stands out as a prime example of the innovative HiPerFET™ Standard series, offering unparalleled performance for a wide range of applications. With its low gate charge and robust design, this N-Channel Power MOSFET is a versatile choice for both hard switching and resonant mode operations. The fast intrinsic diode further enhances efficiency and reliability, making the HiPerFET™ Standard series a preferred choice among industrial engineers. Available in various standard packages, including isolated types, these MOSFETs ensure compatibility and ease of integration in diverse systems

Key Features

  • Fast Switching Capability
  • Low Saturation Current
  • High Speed Performance

Application

  • Long-lasting durability
  • Enhanced power regulation
  • Streamlined power delivery

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™ Package Tube
Product Status Not For New Designs FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 33mOhm @ 45A, 10V Vgs(th) (Max) @ Id 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10000 pF @ 25 V Power Dissipation (Max) 560W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA
Base Product Number IXFK90

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