• packageimg
packageimg

IXFK80N60P3

IXFK80N60P3 MOSFET TO-264AA ROHS

Inventory:5,202

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for IXFK80N60P3 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of IXFK80N60P3

Discover the advantages of the IXFK80N60P3, the latest addition to our PolarP3™ HiPerFET™ product family. This cutting-edge device offers a high Figure of Merit, delivering superior efficiency compared to traditional technologies. With up to a 12 percent reduction in on-state resistance (Rdson) and a 14 percent decrease in gate charge (Qg), our HiPerFETs provide exceptional performance gains. Additionally, the increased maximum power dissipation and lower thermal resistances enhance the total power density of the device, setting a new standard in power semiconductor technology

Key Features

  • Ultra-low capacitance
  • Fast switching frequency
  • Excellent temperature range
  • High reliability rating

Application

  • Innovative robotics
  • Premium servo control
  • Reliable DC converters

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer IXYS Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-264-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 80 A
Rds On - Drain-Source Resistance 70 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 5 V Qg - Gate Charge 190 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.3 kW Channel Mode Enhancement
Tradename HiPerFET Series IXFK80N60
Brand IXYS Configuration Single
Fall Time 8 ns Forward Transconductance - Min 90 S, 55 S
Product Type MOSFET Rise Time 25 ns
Factory Pack Quantity 25 Subcategory MOSFETs
Transistor Type 1 N-Channel Unit Weight 0.352740 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

DDTC123JCA-7-F

DDTC123JCA-7-F

High-quality 50 V NPN Transistor pre-biased for easy installation and use
VQ1000J

VQ1000J

Field-Effect Transistor for Power Applications, N-Channel, Metal-oxide Semiconductor
IRFH5406TRPBF

IRFH5406TRPBF

Bulk-packaged N-channel 60V 11A MOSFET in tape
BC848ALT1G

BC848ALT1G

Bipolar NPN Transistor
MMBTA13LT1

MMBTA13LT1

NPN Darlington Transistor
TIP142G

TIP142G

TIP142G: NPN Darlington Bipolar Power Transistor, 10A, 100V, TO-247 Package
AOT472

AOT472

Describing AOT472, it is an N-channel semiconductor characterized by a voltage tolerance of 75 volts
BSH111,215

BSH111,215

Effect Transistor, 0.335A, 55V, N-Channel MOSFET, TO-236AB
IXTK40P50P

IXTK40P50P

P-MOSFET transistor with PolarP™ technology
NIF9N05CLT1G

NIF9N05CLT1G

N-channel 59V 2.6A Transistor MOSFET in SOT-223 Package