IXFK360N10T
IXFK360N10T is a high-performance N-channel Power MOSFET
Inventory:8,783
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Part Number : IXFK360N10T
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Package/Case : TO-264-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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Datesheet : IXFK360N10T DataSheet (PDF)
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Series : IXFK360N10
Overview of IXFK360N10T
The IXFK360N10T is a powerhouse when it comes to low voltage/high current applications. With an incredibly low RDS(on), this Trench Gate Power MOSFET ensures minimal power dissipation, making it an ideal choice for energy-efficient solutions. Its wide operating junction temperature range from -40 °C to 175 °C further enhances its versatility, making it a top contender for demanding applications in harsh environments, such as automotive systems
Key Features
- Outstanding Power Handling
- Rapid Switching Speed
- Fewer Components Required
Application
- Flexible power supply options
- Efficient power conversion
- Compact and lightweight design
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | HiPerFET™, Trench | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 360A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.9mOhm @ 100A, 10V | Vgs(th) (Max) @ Id | 5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 525 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 33000 pF @ 25 V | Power Dissipation (Max) | 1250W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-264AA (IXFK) | Package / Case | TO-264-3, TO-264AA |
Base Product Number | IXFK360 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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