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IXFK360N10T

IXFK360N10T is a high-performance N-channel Power MOSFET

Inventory:8,783

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Overview of IXFK360N10T

The IXFK360N10T is a powerhouse when it comes to low voltage/high current applications. With an incredibly low RDS(on), this Trench Gate Power MOSFET ensures minimal power dissipation, making it an ideal choice for energy-efficient solutions. Its wide operating junction temperature range from -40 °C to 175 °C further enhances its versatility, making it a top contender for demanding applications in harsh environments, such as automotive systems

Key Features

  • Outstanding Power Handling
  • Rapid Switching Speed
  • Fewer Components Required

Application

  • Flexible power supply options
  • Efficient power conversion
  • Compact and lightweight design

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™, Trench Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 360A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id 5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 525 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 33000 pF @ 25 V Power Dissipation (Max) 1250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA
Base Product Number IXFK360

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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