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IXFK27N80Q

High power handling capability of 500W at 4.5V

Quantity Unit Price(USD) Ext. Price
1 $8.914 $8.91
10 $8.783 $87.83
25 $8.558 $213.95
100 $8.360 $836.00

Inventory:7,684

*The price is for reference only.
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  • 365 Days Quality Guarantee
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Overview of IXFK27N80Q

Known for its exceptional performance, the IXFK27N80Q Power MOSFET is a popular choice among engineers for its reliable operation in both hard switching and resonant mode applications. Its low gate charge and superior ruggedness set it apart from other MOSFETs on the market, ensuring efficient and durable performance. Equipped with a fast intrinsic diode, this device offers added convenience and reliability for various industrial needs. Available in isolated types and other standard industrial packages, the IXFK27N80Q is a versatile solution for a wide range of electronic applications

Key Features

  • Secure Cryptographic Processing
  • Low Power Consumption Mode
  • Flexible Operating Frequency Range

Application

  • Efficient power solution
  • Compact and reliable
  • Versatile applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™, Q Class Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 27A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 320mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7600 pF @ 25 V Power Dissipation (Max) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA
Base Product Number IXFK27

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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