IXFK26N90
MOSFET product IXFK26N90 offering 26 Amps, 900V, and 0.3 Rds
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $44.254 | $44.25 |
200 | $17.657 | $3,531.40 |
500 | $17.068 | $8,534.00 |
1000 | $16.776 | $16,776.00 |
Inventory:8,896
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : IXFK26N90
-
Package/Case : TO-264-3
-
Brand : IXYS
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : IXFK26N90 DataSheet (PDF)
Overview of IXFK26N90
The IXFK26N90 is a top-of-the-line N-Channel HiPerFET™ Standard series product designed for various power MOSFET applications. With its low gate charge and outstanding ruggedness, this MOSFET is perfect for both hard switching and resonant mode operations. Additionally, its fast intrinsic diode ensures optimal performance and efficiency in any industrial setting. The availability of the IXFK26N90 in a range of standard industrial packages, including isolated types, further enhances its versatility and usability across different applications
Key Features
- Small Form Factor
- High Efficiency Performance
- Ultra-Fast Switching Speed
- Suitable for LED Lighting Applications
Application
- Advanced technology
- User-friendly interface
- Customizable settings
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | HiPerFET™ | Package | Tube |
Product Status | Not For New Designs | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 900 V |
Current - Continuous Drain (Id) @ 25°C | 26A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 300mOhm @ 13A, 10V | Vgs(th) (Max) @ Id | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 10800 pF @ 25 V | Power Dissipation (Max) | 560W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-264AA (IXFK) | Package / Case | TO-264-3, TO-264AA |
Base Product Number | IXFK26 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![IXFB100N50P](/files/uploads/product/s/d41d9992ca594ed88ea6f863c3bb11f4.webp)
IXFB100N50P
High-power N-channel MOSFET with 3+Tab Pin Configuration
![IXFH44N50P](/files/uploads/product/s/76d41e9fb68f47e6acc0d0f14f105b9f.webp)
IXFH44N50P
44A, 500V N-channel transistor with TO-247AD packaging
![IXFX180N25T](/files/uploads/product/s/fce1751c-4c05-4474-12e2-08dbc6589f1f.webp)
IXFX180N25T
MOSFET Discrete Component with 180A current capability and 250V voltage rating
![IXFX48N50Q](/files/uploads/product/s/c111d61187dc40ca8ecfa6164c5648c2.webp)
IXFX48N50Q
Transistor MOSFET, N-Type, Capable of Handling 500 Volts and 48 Amps, Encased in TO-247 Package
![IXTA10P50P](/files/uploads/product/s/8054a279f41a45c4a3b0479fc733bace.webp)
IXTA10P50P
Ready to Ship within 1 Day
![IXTP80N10T](/files/uploads/product/s/710ab91dcebf4c3db92bb194c3a5edd9.webp)
IXTP80N10T
MOSFET with 80 Amps and 100V, featuring a Rds of 13.0 for high performance
![IXKR25N80C](/files/uploads/product/s/f8d09721-af36-493e-ce33-08dbc6589f1f.webp)
IXKR25N80C
Three-pin N-channel MOSFET with 800V and 25A rating
![IXFK94N50P2](/files/uploads/product/s/7b0c02188148464b8acac3f38655a7a7.webp)
IXFK94N50P2
Trans MOSFET N-CH 500V 94A 3-Pin(3+Tab) TO-264
![IXTN110N20L2](/files/uploads/product/s/8d573de33a5c45f9bc9d639282027e4d.webp)
IXTN110N20L2
SOT227B-packaged single transistor module engineered for 200V operation and 100A current handling
![IXTP96P085T](/files/uploads/product/s/88b82cf69b8d41fbb118025b6f54baeb.webp)
IXTP96P085T
Metal-oxide Semiconductor FET, P-Channel, 96A Drain Current, 85V Voltage, 0.013ohm On-State Resistance, TO-220AB Housing
![BC337-25RL1G](/img/package/to92.jpg)
BC337-25RL1G
Describing BC337-25RL1G, it is labeled as an NPN Bipolar Transistor
![SI4942DY](/img/package/soic8.jpg)
SI4942DY
channel silicon metal-oxide semiconductor fet
![IRFS3004PBF](/img/package/to263.jpg)
IRFS3004PBF
Tube packaging containing three pins, with two additional tabs
![BSP372L6327](/img/package/to3.jpg)
BSP372L6327
Reliable N-channel FET for voltage regulation and switching
![2SB1226](/img/package/ll34.jpg)
2SB1226
2SB1226 by Sanyo: PNP Darlington Transistor, 3A, 100V, HFE:1500, TO-220ML Package
![T835-600B-TR](/img/package/dpak.jpg)
T835-600B-TR
TRIAC 600V 8A(RMS) 84A 3-Pin(2+Tab) DPAK T/R
![STP130NS04ZB](/img/package/to220.jpg)
STP130NS04ZB
N-Channel Power MOSFET with 80A Current Rating, 33V Voltage Capability, and 0.009ohm Resistance, TO-220AB Package
![IXXN110N65C4H1](/img/package/sot.jpg)
IXXN110N65C4H1
Trans IGBT Chip N-CH 650V 200A 750W 4-Pin SOT-227B
![Q6016LH3](/img/package/to220.jpg)
Q6016LH3
Ruggedized TRIAC design ensures A RMS current handling and reliability
![IRFH5406TRPBF](/img/package/son8.jpg)
IRFH5406TRPBF
Bulk-packaged N-channel 60V 11A MOSFET in tape