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IXFK26N120P

Power Field-Effect Transistor with 26A I(D) and 1200V

Quantity Unit Price(USD) Ext. Price
1 $30.848 $30.85
200 $11.938 $2,387.60
500 $11.519 $5,759.50
1000 $11.312 $11,312.00

Inventory:5,164

*The price is for reference only.
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Overview of IXFK26N120P

When it comes to power efficiency and optimal performance, the IXFK26N120P stands out among its competition. Its ultra-low RDS(on), low thermal resistance, minimal gate charge, and improved DV/DT capability set it apart as a premier choice for engineers seeking advanced power management solutions. Whether you're designing a cutting-edge motor control system or a reliable UPS unit, this HiPerFET offers the best of both worlds in terms of power efficiency and robustness

Key Features

  • High Speed Switching
  • Fine Pitch Leads
  • Low Power Consumption
  • Small Footprint

Application

  • Efficient power management
  • Robust motor drives

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer IXYS Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-264-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV Id - Continuous Drain Current 26 A
Rds On - Drain-Source Resistance 500 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 6.5 V Qg - Gate Charge 255 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 960 W Channel Mode Enhancement
Tradename HiPerFET Series IXFK26N120
Brand IXYS Configuration Single
Fall Time 58 ns Forward Transconductance - Min 13 S
Height 26.16 mm Length 19.96 mm
Product Type MOSFET Rise Time 55 ns
Factory Pack Quantity 25 Subcategory MOSFETs
Transistor Type 1 N-Channel Type Polar HiPerFET Power MOSFET
Typical Turn-Off Delay Time 76 ns Typical Turn-On Delay Time 56 ns
Width 5.13 mm Unit Weight 0.352740 oz

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