IXFK26N120P
Power Field-Effect Transistor with 26A I(D) and 1200V
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $30.848 | $30.85 |
200 | $11.938 | $2,387.60 |
500 | $11.519 | $5,759.50 |
1000 | $11.312 | $11,312.00 |
Inventory:5,164
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Part Number : IXFK26N120P
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Package/Case : TO-264-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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Datesheet : IXFK26N120P DataSheet (PDF)
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Series : IXFK26N120
Overview of IXFK26N120P
When it comes to power efficiency and optimal performance, the IXFK26N120P stands out among its competition. Its ultra-low RDS(on), low thermal resistance, minimal gate charge, and improved DV/DT capability set it apart as a premier choice for engineers seeking advanced power management solutions. Whether you're designing a cutting-edge motor control system or a reliable UPS unit, this HiPerFET offers the best of both worlds in terms of power efficiency and robustness
Key Features
- High Speed Switching
- Fine Pitch Leads
- Low Power Consumption
- Small Footprint
Application
- Efficient power management
- Robust motor drives
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | IXYS | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-264-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 1.2 kV | Id - Continuous Drain Current | 26 A |
Rds On - Drain-Source Resistance | 500 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 6.5 V | Qg - Gate Charge | 255 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 960 W | Channel Mode | Enhancement |
Tradename | HiPerFET | Series | IXFK26N120 |
Brand | IXYS | Configuration | Single |
Fall Time | 58 ns | Forward Transconductance - Min | 13 S |
Height | 26.16 mm | Length | 19.96 mm |
Product Type | MOSFET | Rise Time | 55 ns |
Factory Pack Quantity | 25 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | Polar HiPerFET Power MOSFET |
Typical Turn-Off Delay Time | 76 ns | Typical Turn-On Delay Time | 56 ns |
Width | 5.13 mm | Unit Weight | 0.352740 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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