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IXFK180N25T

N-channel power MOSFET with 250V voltage rating and 180A current rating in TO-264 package

Inventory:4,366

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Overview of IXFK180N25T

Engineered for excellence, the IXFK180N25T Trench Gate Power MOSFET offers unparalleled performance in low voltage and high current applications. Its remarkably low RDS(on) ensures that power dissipation is kept to a minimum, resulting in enhanced energy efficiency. With a wide operating temperature range and a robust design, this MOSFET is well-suited for demanding applications in harsh environments, making it a reliable choice for a variety of industrial and automotive applications

Key Features

  • Safe and Reliable Operation
  • Real-Time Monitoring Capabilities
  • Increased Productivity
  • Improved User Experience

Application

  • Current Sensing Applications
  • Thermal Management Solutions
  • Gate Drive Optocouplers

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED Avalanche Energy Rating (Eas) 5000 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 0.0129 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 47 pF JEDEC-95 Code TO-264AA
JESD-30 Code R-PSFM-T3 JESD-609 Code e1
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1390 W Pulsed Drain Current-Max (IDM) 500 A
Surface Mount NO Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application SWITCHING
Transistor Element Material SILICON

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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