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IXFK180N10

Effect Transistor

Quantity Unit Price(USD) Ext. Price
1 $37.873 $37.87
200 $15.113 $3,022.60
500 $14.608 $7,304.00
1000 $14.358 $14,358.00

Inventory:7,807

*The price is for reference only.
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Overview of IXFK180N10

Discover the IXFK180N10, a standout offering from the N-Channel HiPerFET™ Standard series that sets the bar high in terms of performance and durability. Boasting low gate charge and excellent ruggedness with a rapid intrinsic diode, this Power MOSFET is engineered to excel in both hard switching and resonant mode applications. Its availability in a range of standard industrial packages, including isolated variants, underscores its versatility and suitability for diverse usage scenarios

Key Features

  • Overvoltage Protection
  • Short Circuit Protection
  • Fast Fault Protection
  • Advanced Overcurrent Detection

Application

  • Small size
  • Efficient performance
  • Wide applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™ Package Tube
Product Status Not For New Designs FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 390 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10900 pF @ 25 V Power Dissipation (Max) 560W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA
Base Product Number IXFK180

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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