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IXFK100N65X2

N-channel power MOSFET with a 650V maximum voltage and 100A maximum current rating in a TO-264 package

Inventory:7,518

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Overview of IXFK100N65X2

The IXFK100N65X2 sets a new standard for MOSFET performance with its advanced features and technologies. Developed using the charge compensation principle and proprietary process technology, these devices offer unmatched on-state resistances, low gate charges, and superior dv/dt performance. With enhanced avalanche capability and a fast soft-recovery body diode, the Ultra-Junction MOSFETs provide superior ruggedness and reliability. These features make the IXFK100N65X2 an ideal choice for applications where performance and reliability are crucial

Key Features

  • Reduced EMI emissions
  • Increased efficiency
  • Simplified application
  • Achievable performance

Application

  • Efficient robotics systems
  • Adaptive motor drives
  • Powerful battery chargers

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™, Ultra X2 Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 10V Vgs(th) (Max) @ Id 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 11300 pF @ 25 V Power Dissipation (Max) 1040W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-264 Package / Case TO-264-3, TO-264AA
Base Product Number IXFK100

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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