• IXFH88N30P TO-247-3
IXFH88N30P TO-247-3

IXFH88N30P

TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current

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Overview of IXFH88N30P

The IXFH88N30P is a high-power MOSFET designed for use in various power electronic applications. This MOSFET offers low on-state resistance and high switching speed, making it suitable for high-efficiency power conversion systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VCC: Positive Power Supply
  • GND: Power Ground
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFH88N30P MOSFET for a visual representation.

Key Features

  • High Power Handling: The IXFH88N30P can handle high power levels, making it suitable for power applications.
  • Low On-State Resistance: With low RDS(on), this MOSFET minimizes power losses and heat generation during operation.
  • Fast Switching Speed: The high switching speed of the IXFH88N30P enables efficient power conversion in electronic circuits.
  • Enhanced Thermal Performance: Designed for improved thermal dissipation to maintain operational stability under high loads.
  • Robust Construction: Built to withstand high voltages and currents for reliable performance in demanding environments.

Note: For detailed technical specifications, please refer to the IXFH88N30P datasheet.

Application

  • Power Inverters: Ideal for use in power inverters for converting DC power to AC power efficiently.
  • Motor Control: Suitable for motor control applications where high-power switching is required.
  • Switching Power Supplies: Used in switching power supply designs for efficient power conversion.

Functionality

The IXFH88N30P MOSFET is designed to control high power levels with minimal losses, offering efficient power conversion in various electronic systems.

Usage Guide

  • Gate Drive: Apply the appropriate gate voltage to turn the MOSFET on and off for controlling power flow.
  • Power Connections: Connect the Drain and Source pins in the circuit according to the application requirements.
  • Thermal Management: Ensure proper heat sinking to maintain the MOSFET within operating temperature limits.

Frequently Asked Questions

Q: Can the IXFH88N30P be used in high-frequency switching applications?
A: Yes, the IXFH88N30P offers fast switching speeds suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the IXFH88N30P:

  • IXFH30N60: A comparable high-power MOSFET with slightly different characteristics but similar performance.
  • IRF840: This MOSFET from Infineon offers high power handling capabilities for power electronic applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 300 Maximum On-Resistance @ 25 ℃ (Ohm) 0.04
Continuous Drain Current @ 25 ℃ (A) 88 Gate Charge (nC) 180
Input Capacitance, CISS (pF) 6300 Thermal resistance [junction-case] (K/W) 0.21
Configuration Single Package Type TO-247
Power Dissipation (W) 600 Maximum Reverse Recovery (ns) 200
Sample Request No Check Stock Yes

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