IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
Inventory:6,158
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Part Number : IXFH88N30P
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Package/Case : TO-247-3
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Brands : IXYS
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Components Categories : Single FETs, MOSFETs
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Datesheet : IXFH88N30P DataSheet (PDF)
The IXFH88N30P is a high-power MOSFET designed for use in various power electronic applications. This MOSFET offers low on-state resistance and high switching speed, making it suitable for high-efficiency power conversion systems. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IXFH88N30P MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IXFH88N30P datasheet. Functionality The IXFH88N30P MOSFET is designed to control high power levels with minimal losses, offering efficient power conversion in various electronic systems. Usage Guide Q: Can the IXFH88N30P be used in high-frequency switching applications? For similar functionalities, consider these alternatives to the IXFH88N30P:Overview of IXFH88N30P
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the IXFH88N30P offers fast switching speeds suitable for high-frequency applications.Equivalent
![](/files/uploads/product/b/7ef4f017e4a243b89c8637b1fe24c3f4.webp)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Drain-Source Voltage (V) | 300 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.04 |
Continuous Drain Current @ 25 ℃ (A) | 88 | Gate Charge (nC) | 180 |
Input Capacitance, CISS (pF) | 6300 | Thermal resistance [junction-case] (K/W) | 0.21 |
Configuration | Single | Package Type | TO-247 |
Power Dissipation (W) | 600 | Maximum Reverse Recovery (ns) | 200 |
Sample Request | No | Check Stock | Yes |
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Warranty, Returns, and Additional Information
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