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IXFH50N20

IXFH50N20 is a N Channel TO-247AD MOSFET with a voltage rating of 200V and a current rating of 50A

Quantity Unit Price(USD) Ext. Price
1 $7.142 $7.14
200 $2.764 $552.80
500 $2.668 $1,334.00
1000 $2.620 $2,620.00

Inventory:8,570

*The price is for reference only.
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Overview of IXFH50N20

The IXFH50N20 is a Power MOSFET transistor designed for high-power applications such as power supplies, motor control, and inverters. It offers a low on-state resistance and high current capability, making it suitable for demanding industrial and automotive applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • B: Body Diode

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFH50N20 for a visual representation.

Key Features

  • High Power Capability: The IXFH50N20 can handle high power levels, making it suitable for applications requiring high current operation.
  • Low On-State Resistance: With a low RDS(on), this MOSFET minimizes power dissipation and improves efficiency in power electronics.
  • Fast Switching Speed: The IXFH50N20 offers fast switching characteristics, enabling high-frequency operation in power conversion circuits.
  • Enhanced Thermal Performance: This MOSFET features a robust package design for efficient heat dissipation, ensuring reliable operation under high load conditions.

Note: For detailed technical specifications, please refer to the IXFH50N20 datasheet.

Application

  • Power Supplies: Ideal for use in high-power switch-mode power supply units for efficient power conversion.
  • Motor Control: Suitable for motor drive applications requiring high current handling capabilities.
  • Inverters: Used in inverter circuits for converting DC power to AC power in industrial and automotive systems.

Functionality

The IXFH50N20 is a power MOSFET transistor that provides high power handling capabilities with low on-state resistance, enabling efficient power control in various applications.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to control the switching behavior of the MOSFET.
  • Power Connections: Connect the drain and source pins to the circuit according to the application requirements.
  • Heat Management: Ensure proper thermal design to maintain the MOSFET within safe operating temperatures under high load conditions.

Frequently Asked Questions

Q: Can the IXFH50N20 be used in automotive applications?
A: Yes, the IXFH50N20 is suitable for automotive applications that require high-power handling capabilities.

Equivalent

For similar functionalities, consider these alternatives to the IXFH50N20:

  • IRF520: A power MOSFET with comparable specifications suitable for high-power applications.
  • BUK854R: This MOSFET offers similar performance characteristics to the IXFH50N20 and is commonly used in power electronics designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 200 Maximum On-Resistance @ 25 ℃ (Ohm) 0.045
Continuous Drain Current @ 25 ℃ (A) 50 Gate Charge (nC) 190
Input Capacitance, CISS (pF) 4400 Thermal resistance [junction-case] (K/W) 0.42
Configuration Single Package Type TO-247
Power Dissipation (W) 298 Maximum Reverse Recovery (ns) 200
Sample Request No

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