• packageimg
packageimg

IXFH26N60Q

6 ampere electronic component, 600 volt MOSFET

Inventory:5,648

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for IXFH26N60Q using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of IXFH26N60Q

The IXFH26N60Q is a high-power IGBT (Insulated Gate Bipolar Transistor) designed for applications requiring high efficiency and fast switching characteristics. It is suitable for use in power supplies, motor control, and renewable energy systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • C-E: Collector-Emitter connection
  • G-E: Gate-Emitter connection
  • E: Emitter
  • G: Gate
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFH26N60Q IGBT for a visual representation.

Key Features

  • High Power Handling Capability: The IXFH26N60Q is capable of handling high power levels, making it suitable for demanding applications.
  • Fast Switching Speed: This IGBT offers fast switching characteristics, enabling efficient control of power flow in electronic systems.
  • Low Saturation Voltage: It exhibits low saturation voltage, resulting in reduced power dissipation and improved efficiency.
  • High Input Impedance: The high input impedance allows for easy and efficient control of the IGBT.
  • Robust and Reliable: Designed for robust performance and reliability in various industrial and power electronic applications.

Note: For detailed technical specifications, please refer to the IXFH26N60Q datasheet.

Application

  • Power Supplies: Ideal for use in high-power switching power supply applications.
  • Motor Control: Suitable for motor control systems in industrial and automotive applications.
  • Renewable Energy Systems: Used in inverters and power electronics for renewable energy generation systems.

Functionality

The IXFH26N60Q is a high-power IGBT designed for efficient power switching and control in various electronic systems. It offers reliable performance and high efficiency in demanding applications.

Usage Guide

  • Connections: Connect the Collector, Emitter, and Gate pins based on the specific circuit requirements.
  • Drive Circuit: Ensure proper drive circuit design to control the switching characteristics of the IGBT for desired operation.
  • Heat Management: Implement suitable heat sinking and thermal management for maintaining proper operating temperatures.

Frequently Asked Questions

Q: Is the IXFH26N60Q suitable for high-frequency switching applications?
A: Yes, the fast switching speed of the IXFH26N60Q makes it suitable for high-frequency switching requirements in power electronics.

Equivalent

For similar functionalities, consider these alternatives to the IXFH26N60Q:

  • IXGH48N60C: This is a comparable IGBT offering similar power handling and switching characteristics.
  • IRG4PH50UD: A power IGBT with features suitable for high-efficiency power electronic applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 600 Maximum On-Resistance @ 25 ℃ (Ohm) 0.25
Continuous Drain Current @ 25 ℃ (A) 28 Gate Charge (nC) 150
Input Capacitance, CISS (pF) 5100 Thermal resistance [junction-case] (K/W) 0.35
Configuration Single Package Type TO-247
Power Dissipation (W) 357 Maximum Reverse Recovery (ns) 250
Sample Request No

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

IXTH96P085T

IXTH96P085T

TO-247 MOSFET by LITTELFUSE - IXTH96P085T, P-CH, 85V, 96A
DMP4015SK3-13

DMP4015SK3-13

Diodes Inc DMP4015SK3-13 P-channel MOSFET Transistor, 11 A, -40 V, 3-Pin TO-252
NVF6P02T3G

NVF6P02T3G

Designed for automotive applications, the NVF6P02T3G is a P-channel MOSFET transistor rated for up to 20V and 10A
CM15TF-12H

CM15TF-12H

The CM15TF-12H product is a 17-pin Trans IGBT Module, with N-channel operation, engineered to handle 15A of current and 600V of voltage
MJ10001

MJ10001

Bipolar junction transistor of NPN type in TO-204AA package
FMMT614TA

FMMT614TA

A 100V NPN transistor capable of handling currents up to 0
IPD220N06L3GBTMA1

IPD220N06L3GBTMA1

High-performance OptiMOS™ Power Mosfet with low on-resistance
LM394CH

LM394CH

BJT bipolar transistors LM394CH
IRF7103Q

IRF7103Q

3 Amp, 50 Volt, 0.13 Ohm, N-Channel MOSFET
NVMFD5C680NLT1G

NVMFD5C680NLT1G

Dual N-Channel Power MOSFET capable of handling up to 60V and 17A, with a low resistance of 39mOhm