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IXFH12N120P

N-channel 1.2KV, 12A Trans MOSFET with TO-247 package"

Inventory:8,887

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Overview of IXFH12N120P

IXFH12N120P Polar™ HiPerFETs are engineered to deliver exceptional performance for demanding power applications. The faster body diode with reduced reverse recovery time enhances their suitability for phase-shift bridges and UPS systems, where efficiency and reliability are key. These FETs boast low RDS(on), low thermal resistance (RthJC), low gate charge (Qg), and enhanced DV/DT capability, setting a new standard in power electronics. Their advanced features and robust design make them a reliable choice for industrial and commercial applications requiring high performance and durability. With the IXFH12N120P Polar™ HiPerFETs, users can expect superior efficiency, responsiveness, and longevity in their power systems

Key Features

  • Surface Mount Friendly
  • Low Profile Solution
  • Efficient Thermal Management

Application

  • High-performance converters
  • Robust power management
  • Effortless power control

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™, Polar Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.35Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 25 V Power Dissipation (Max) 543W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3
Base Product Number IXFH12

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

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