IXFB52N90P
N-Channel MOSFET with 52A Discharge Current and 900V Voltage Rating
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $71.435 | $71.44 |
200 | $28.504 | $5,700.80 |
500 | $27.550 | $13,775.00 |
1000 | $27.080 | $27,080.00 |
Inventory:8,674
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : IXFB52N90P
-
Package/Case : TO-264-3
-
Brand : IXYS
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : IXFB52N90P DataSheet (PDF)
-
Series : IXFB52N90
The IXFB52N90P is a power MOSFET transistor designed for high-voltage applications in power electronics.This MOSFET features a low on-state resistance and high current capability,making it suitable for power management and switching applications. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IXFB52N90P MOSFET for a visual representation. Note:For detailed technical specifications,please refer to the IXFB52N90P datasheet. Functionality The IXFB52N90P power MOSFET transistor is designed for power management applications,providing high voltage handling,low on-state resistance,and high current capability for efficient power delivery in various electronic systems. Usage Guide Q:Can the IXFB52N90P be used in high-power applications? For similar functionalities,consider these alternatives to the IXFB52N90P:Overview of IXFB52N90P
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A:Yes,the IXFB52N90P is designed for high-power applications and offers a high current capability for handling large loads.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Drain-Source Voltage (V) | 900 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.16 |
Continuous Drain Current @ 25 ℃ (A) | 52 | Gate Charge (nC) | 308 |
Input Capacitance, CISS (pF) | 19000 | Thermal resistance [junction-case] (K/W) | 0.1 |
Configuration | Single | Package Type | TO-264 PLUS |
Power Dissipation (W) | 1250 | Maximum Reverse Recovery (ns) | 300 |
Sample Request | No | Check Stock | Yes |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![IXFB100N50P](/files/uploads/product/s/d41d9992ca594ed88ea6f863c3bb11f4.webp)
IXFB100N50P
High-power N-channel MOSFET with 3+Tab Pin Configuration
![IXFH44N50P](/files/uploads/product/s/76d41e9fb68f47e6acc0d0f14f105b9f.webp)
IXFH44N50P
44A, 500V N-channel transistor with TO-247AD packaging
![IXFX180N25T](/files/uploads/product/s/fce1751c-4c05-4474-12e2-08dbc6589f1f.webp)
IXFX180N25T
MOSFET Discrete Component with 180A current capability and 250V voltage rating
![IXFX48N50Q](/files/uploads/product/s/c111d61187dc40ca8ecfa6164c5648c2.webp)
IXFX48N50Q
Transistor MOSFET, N-Type, Capable of Handling 500 Volts and 48 Amps, Encased in TO-247 Package
![IXTA10P50P](/files/uploads/product/s/8054a279f41a45c4a3b0479fc733bace.webp)
IXTA10P50P
Ready to Ship within 1 Day
![IXTP80N10T](/files/uploads/product/s/710ab91dcebf4c3db92bb194c3a5edd9.webp)
IXTP80N10T
MOSFET with 80 Amps and 100V, featuring a Rds of 13.0 for high performance
![IXKR25N80C](/files/uploads/product/s/f8d09721-af36-493e-ce33-08dbc6589f1f.webp)
IXKR25N80C
Three-pin N-channel MOSFET with 800V and 25A rating
![IXFK94N50P2](/files/uploads/product/s/7b0c02188148464b8acac3f38655a7a7.webp)
IXFK94N50P2
Trans MOSFET N-CH 500V 94A 3-Pin(3+Tab) TO-264
![IXTN110N20L2](/files/uploads/product/s/8d573de33a5c45f9bc9d639282027e4d.webp)
IXTN110N20L2
SOT227B-packaged single transistor module engineered for 200V operation and 100A current handling
![IXTP96P085T](/files/uploads/product/s/88b82cf69b8d41fbb118025b6f54baeb.webp)
IXTP96P085T
Metal-oxide Semiconductor FET, P-Channel, 96A Drain Current, 85V Voltage, 0.013ohm On-State Resistance, TO-220AB Housing
![BTA16-600CW3G](/img/package/to220.jpg)
BTA16-600CW3G
BTA16-600CW3G: ISO TO220 TRIAC rated at 16A with 35mA sensitivity
![IRF7410TRPBF](/img/package/soic8.jpg)
IRF7410TRPBF
Product Description: IRF7410TRPBF MOSFET N-channel 12V SO-8
![FF800R12KF4](/img/package/module.jpg)
FF800R12KF4
800A Insulated Gate Bipolar Transistor with 1200V V(BR)CES
![MRF10005](/img/product.png)
MRF10005
NPN Bipolar Transistor
![DTD123EKT146](/img/package/sc70.jpg)
DTD123EKT146
0V 500mA Transistor
![FDS5682](/img/package/soic8.jpg)
FDS5682
The FDS5682 is a surface-mount N-channel MOSFET designed for switching applications
![FZT600TA](/files/uploads/product/s/9650a13d4a7b4b0f81e1856fcff240c0.webp)
FZT600TA
40V maximum voltage rating in a 4-pin configuration with a tab for heat dissipation in a tape and reel packaging
![IRF7478TRPBF](/img/package/soic8.jpg)
IRF7478TRPBF
Power transistor capable of handling 60V, 7.6A, with a resistance of 26mOhm and charge of 21nC
![IXFH36N50P](/img/package/to247.jpg)
IXFH36N50P
MOSFETs TO-247AD ROHS
![IXGH15N120CD1](/img/package/to247ad.jpg)
IXGH15N120CD1
Contact us for specifics