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IXFB210N30P3

Industrial-grade N-channel transistor

Inventory:5,538

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Overview of IXFB210N30P3

The IXFB210N30P3 is a power MOSFET designed for use in high-power applications. It offers efficient switching and can handle high current levels making it suitable for power electronics and motor control applications.

  • High Current Capability: IXFB210N30P3 can handle significant levels of current, making it suitable for high-power applications.
  • Low ON-State Resistance: With low ON-state resistance, this MOSFET minimizes power losses during operation.
  • Fast Switching: The fast switching speed allows for efficient control of power flow in electronic circuits.
  • Robust Construction: The IXFB21030P3 is designed to withstand high voltage and current stresses, ensuring reliable performance in demanding environments.

    • Note: For detailed technical specifications, please refer to the IXFBN30P3 datasheet.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 300 Maximum On-Resistance @ 25 ℃ (Ohm) 0.0145
Continuous Drain Current @ 25 ℃ (A) 210 Gate Charge (nC) 268
Input Capacitance, CISS (pF) 16200 Thermal resistance [junction-case] (K/W) 0.066
Configuration Single Package Type TO-264 PLUS
Power Dissipation (W) 1890 Maximum Reverse Recovery (ns) 250
Sample Request No Check Stock Yes

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