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IXFB170N30P

High power MOSFET for polar applications

Quantity Unit Price(USD) Ext. Price
1 $76.798 $76.80
200 $30.644 $6,128.80
500 $29.619 $14,809.50
1000 $29.114 $29,114.00

Inventory:8,267

*The price is for reference only.
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Overview of IXFB170N30P

Designed to excel in demanding applications, the IXFB170N30P Polar™ HiPerFETs stand out for their exceptional performance characteristics. With a focus on optimization and speed, these FETs feature a faster body diode with reduced reverse recovery time (trr), making them ideal for tasks like phase-shift bridges motor control and UPS operations. Boasting attributes such as low RDS(on), low RthJC, low Qg, and enhanced DV/DT capability, this HiPerFET family sets a new standard for efficiency and reliability

Key Features

  • Reduced EMI Susceptibility
  • Improved Heat Dissipation
  • Suitable for Wide Range Applications
  • High Reliability and Low Failures

Application

  • Flexible DC-DC converters
  • Secure power supply systems
  • AC motor drive applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™, Polar Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 85A, 10V Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 258 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 20000 pF @ 25 V Power Dissipation (Max) 1250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package PLUS264™ Package / Case TO-264-3, TO-264AA
Base Product Number IXFB170

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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