IXBT42N170
Trans IGBT Chip N-CH 1700V 80A 360W 3-Pin(2+Tab) TO-268
Inventory:6,123
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Part Number : IXBT42N170
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Package/Case : TO-268AA
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Brand : IXYS
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Components Classification : Single IGBTs
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Datesheet : IXBT42N170 DataSheet (PDF)
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Series : IXBT42N170
Overview of IXBT42N170
With these advancements, the IXBT42N170 BiMOSFET offers a reliable solution for applications requiring high voltage capabilities. Its unique design and operational characteristics make it an ideal choice for industries such as power electronics, automotive systems, and renewable energy. The combination of enhanced performance and built-in protection features distinguishes BiMOSFETs as a versatile and dependable semiconductor technology
Key Features
- Innovative cooling system design
- High-speed signal processing
- Multifunctional alarm notification
- Simplified calibration process
Application
- Aerospace guidance systems
- Marine navigation equipment
- Satellite communication devices
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Active | Ihs Manufacturer | LITTELFUSE INC |
| Package Description | , | Reach Compliance Code | |
| ECCN Code | EAR99 | Samacsys Manufacturer | LITTELFUSE |
| Additional Feature | LOW CONDUCTION LOSS | Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 80 A | Collector-Emitter Voltage-Max | 1700 V |
| Configuration | SINGLE WITH BUILT-IN DIODE | Gate-Emitter Thr Voltage-Max | 5.5 V |
| Gate-Emitter Voltage-Max | 20 V | JEDEC-95 Code | TO-268AA |
| JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 2 | Operating Temperature-Max | 150 °C |
| Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 360 W | Surface Mount | YES |
| Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Application | POWER CONTROL | Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 1070 ns | Turn-on Time-Nom (ton) | 224 ns |
| VCEsat-Max | 2.8 V |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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