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ISC16DP15LMATMA1

Trans MOSFET P-CH 150V 2.5A 8-Pin TDSON EP T/R

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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Infineon Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Package / Case PG-TDSON-8 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 150 V
Id - Continuous Drain Current 22 A Rds On - Drain-Source Resistance 160 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 46 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 188 W
Channel Mode Enhancement Series ISC16DP15
Brand Infineon Technologies Configuration Single
Fall Time 32.06 ns Forward Transconductance - Min 31 S
Product Type MOSFET Rise Time 18.24 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Typical Turn-Off Delay Time 73.92 ns Typical Turn-On Delay Time 67.76 ns
Part # Aliases ISC16DP15LM SP005412118

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