ISC0804NLSATMA1
Advanced surface mount transistor for demanding applications requiring high current and voltag
Inventory:9,530
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : ISC0804NLSATMA1
-
Package/Case : PG-TDSON-8
-
Brand : INFINEON
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : ISC0804NLSATMA1 DataSheet (PDF)
-
Series : ISC0804NLS
Overview of ISC0804NLSATMA1
N-Channel 100 V 12A (Ta), 59A (Tc) 2.5W (Ta), 60W (Tc) Surface Mount PG-TDSON-8
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Infineon | Product Category | MOSFET |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TDSON-FL-8 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 59 A | Rds On - Drain-Source Resistance | 10.9 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.3 V |
Qg - Gate Charge | 9.2 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 60 W |
Channel Mode | Enhancement | Brand | Infineon Technologies |
Product Type | MOSFET | Factory Pack Quantity | 5000 |
Subcategory | MOSFETs | Part # Aliases | ISC0804NLS SP005430380 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![ISC230N10NM6ATMA1](/img/package/son8.jpg)
ISC230N10NM6ATMA1
ISC230N10NM6ATMA1 is a high-voltage TRENCH MOSFET with a rating of 100V or more
![ISZ0703NLSATMA1](/img/package/so5.jpg)
ISZ0703NLSATMA1
TRENCH MOSFET 40-100V
![ISC16DP15LMATMA1](/img/package/son8.jpg)
ISC16DP15LMATMA1
Trans MOSFET P-CH 150V 2.5A 8-Pin TDSON EP T/R
![ISC012N04NM6ATMA1](/img/package/power33.jpg)
ISC012N04NM6ATMA1
Metal-Oxide-Semiconductor Field-Effect Transistor
![ISC037N03L5ISATMA1](/img/package/son8.jpg)
ISC037N03L5ISATMA1
Low resistance, high current switching device for V, A@
![IST006N04NM6AUMA1](/img/package/ll34.jpg)
IST006N04NM6AUMA1
Advanced MOSFET technology for reliable energy transfer
![ISP16DP10LMXTSA1](/img/package/sot23.jpg)
ISP16DP10LMXTSA1
Trans MOSFET P-CH 100V 2.1A 4-Pin(3+Tab) SOT-223 T/R
![FDD5N50NZTM](/img/package/dpak2.jpg)
FDD5N50NZTM
500 volts voltage rating
![MUBW30-06A7](/img/product.png)
MUBW30-06A7
Power module with IGBT and diode/transistor components, 600V voltage tolerance, 35A current handling
![BFS17A,215](/img/package/sot23.jpg)
BFS17A,215
TO-236AB package type with 3 pins for easy mounting
![MMBT2907A-TP](/img/package/sot23.jpg)
MMBT2907A-TP
The MMBT2907A-TP is a PNP Bipolar Junction Transistor (BJT) suitable for a range of general-purpose tasks
![MMBT2222AT-7-F](/img/package/sot523.jpg)
MMBT2222AT-7-F
RL NPN Small Signal Transistor in SOT-523 Package
![IRF7460](/img/package/soic8.jpg)
IRF7460
IRF7460 Surface Mount Component
![SSP7N60B](/img/package/to220.jpg)
SSP7N60B
N-Channel Power MOSFET with 600V Voltage Rating and 7A Current Capacity in TO-220 Package
![BLF183XRU](/img/product.png)
BLF183XRU
High power 350W SOT-1121A MOSFETs meeting ROHS standards
![IRFP7430PBF](/img/package/to247.jpg)
IRFP7430PBF
40V MOSFET capable of handling 195A
![IXFK230N20T](/img/package/to264.jpg)
IXFK230N20T
MOSFETs TO-264AA ROHS