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IRF7380PBF

Mosfet Array with 80V voltage rating, 3.6A current rating, and 2W power dissipation in a Surface Mount package with 8-SO pins

Inventory:5,650

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Overview of IRF7380PBF

The IRF7380PBF is a power MOSFET designed for use in high-power applications. It features a low on-resistance and high drain current capability, making it ideal for applications such as power supplies, motor control, and electronic switch applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal
  • D: Drain terminal
  • S: Source terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF7380PBF MOSFET for a visual representation.

Key Features

  • High Power Handling: The IRF7380PBF can handle high drain currents and power dissipation, making it suitable for high-power applications.
  • Low On-Resistance: This MOSFET has a low on-resistance, resulting in minimal power loss and improved efficiency.
  • Fast Switching Speed: The IRF7380PBF offers fast switching characteristics, enabling quick response time in electronic circuits.
  • Wide Voltage Range: It operates within a wide voltage range, making it compatible with various power supply systems.
  • Enhanced Thermal Performance: The IRF7380PBF is designed with enhanced thermal properties to handle high power dissipation.

Note: For detailed technical specifications, please refer to the IRF7380PBF datasheet.

Application

  • Power Supplies: The IRF7380PBF is commonly used in power supply circuits to regulate and control the flow of power.
  • Motor Control: It can be employed in motor control applications to drive and control the speed of motors.
  • Electronic Switching: The IRF7380PBF is suitable for electronic switch applications, allowing for easy control and switching of electronic signals.

Functionality

The IRF7380PBF power MOSFET provides efficient switching and control of high-power electrical signals. It offers low power loss and high reliability, making it an essential component in various power and control applications.

Usage Guide

  • Power Connections: Connect the drain (D) terminal to the power source and the source (S) terminal to the load or ground.
  • Gate Control: Apply a suitable voltage signal to the gate (G) terminal to control the MOSFET's conductive state.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 3.6 A Rds On - Drain-Source Resistance 73 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Qg - Gate Charge 15 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Dual
Fall Time 17 ns Height 1.75 mm
Length 4.9 mm Product Type MOSFET
Rise Time 10 ns Factory Pack Quantity 3800
Subcategory MOSFETs Transistor Type 2 N-Channel
Type Power MOSFET Typical Turn-Off Delay Time 41 ns
Typical Turn-On Delay Time 9 ns Width 3.9 mm
Part # Aliases SP001555280 Unit Weight 0.019048 oz

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